PartNumber | FGA5065ADF | FGA50N100BNTDTU | FGA50N100BNTD2 |
Description | IGBT Transistors FS3TIGBT TO3PN 50A 650V | IGBT Transistors 600V 4 0A UFD | IGBT Transistors N-ch / 50A 1000V |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-3PN | TO-3P-3 | TO-3PN |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 650 V | 1000 V | 1000 V |
Collector Emitter Saturation Voltage | 2.28 V | 2.5 V | 1.5 V |
Maximum Gate Emitter Voltage | 30 V | 25 V | 25 V |
Continuous Collector Current at 25 C | 100 A | - | 50 A |
Pd Power Dissipation | 268 W | 156 W | 156 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Series | FGA5065ADF | FGA50N100BNTD | FGA50N100BNTD2 |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 50 A | 50 A | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Gate Emitter Leakage Current | +/- 400 nA | +/- 500 nA | 500 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 450 | 450 | 450 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.225789 oz | 0.225789 oz | 0.225789 oz |
Height | - | 18.9 mm | - |
Length | - | 15.8 mm | - |
Width | - | 5 mm | - |
Continuous Collector Current | - | 50 A | - |