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FGA50N100BNTDTU

FGA50N100BNTDTU
Mfr. #:
FGA50N100BNTDTU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 600V 4 0A UFD
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGA50N100BNTDTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FGA50N100BNTDTU más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-3P-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1000 V
Voltaje de saturación colector-emisor:
2.5 V
Voltaje máximo del emisor de puerta:
25 V
Pd - Disipación de energía:
156 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
FGA50N100BNTD
Embalaje:
Tubo
Corriente continua de colector Ic Max:
50 A
Altura:
18.9 mm
Longitud:
15.8 mm
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
50 A
Corriente de fuga puerta-emisor:
+/- 500 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Unidad de peso:
0.225789 oz
Tags
FGA50N100BNTD, FGA50N100B, FGA50N10, FGA50N1, FGA50N, FGA5, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
IGBT 1000V 50A 156W TO3P / Trans IGBT Chip N-CH 1000V 50A 156000mW 3-Pin(3+Tab) TO-3P Tube
***ark
Transistor,igbt,n-Chan+Diode,1Kv V(Br)Ces,50A I(C),to-247Var
***th Star Micro
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications
***rchild Semiconductor
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder , induction heating and microwave oven applications.
***ark
Transistor,igbt,n-Chan+Diode,1Kv V(Br)Ces,42A I(C),to-264 Rohs Compliant: Yes
***ure Electronics
FGL60N100BNTD Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264
***rchild Semiconductor
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
***ical
Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, TO-247AD; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-
***p One Stop Global
Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
1200V ULTRAFAST 5-40 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PH40UPBF
***ure Electronics
IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-220AB
***ure Electronics
IXGP Series 1200 V 40 A Flange Mount GEN X3 IGBT - TO-220AB
***nell
IGBT,1200V,20A,TO-220AB; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins
***p One Stop Global
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ark
MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
***ure Electronics
IXA20I1200PB Series 1200 V 38 A Through Hole Silicon IGBT - TO-220-3
***el Electronic
IXYS SEMICONDUCTOR IXA20I1200PB IGBT Single Transistor, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 Pins
***nell
IGBT,1200V,33A,TO-220; DC Collector Current: 33A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins;
***ark
Igbt, 1200V, 33A, To-220; Continuous Collector Current:33A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:130W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FGA50N100BNTDTU
DISTI # 31320094		ON Semiconductor1000V, 50A NPT-TRENCH IGBT CO-2250
  • 500:$2.8710
  • 450:$3.1977
FGA50N100BNTDTU
DISTI # 11744703		ON Semiconductor1000V, 50A NPT-TRENCH IGBT CO-270
  • 500:$2.8710
  • 270:$3.1977
FGA50N100BNTDTU
DISTI # FGA50N100BNTDTU-ND		ON SemiconductorIGBT 1000V 50A 156W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube		448In Stock
  • 2700:$2.4461
  • 900:$2.9004
  • 450:$3.2323
  • 25:$3.9312
  • 10:$4.1580
  • 1:$4.6300
FGA50N100BNTDTU
DISTI # FGA50N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA50N100BNTDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.9900
  • 500:€2.0900
  • 100:€2.1900
  • 50:€2.2900
  • 25:€2.3900
  • 10:€2.4900
  • 1:€2.6900
FGA50N100BNTDTU
DISTI # FGA50N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA50N100BNTDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$2.0900
  • 450:$2.1900
  • 900:$2.1900
  • 1800:$2.1900
  • 2700:$2.1900
FGA50N100BNTDTU
DISTI # 86K1436		ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,50A I(C),TO-247var0
  • 10000:$2.3700
  • 2500:$2.5100
  • 1000:$2.6300
  • 500:$3.0800
  • 100:$3.4200
  • 10:$4.1200
  • 1:$5.0800
FGA50N100BNTDTU
DISTI # 512-FGA50N100BNTDTU		ON SemiconductorIGBT Transistors 600V 4 0A UFD
RoHS: Compliant		427
  • 1:$4.6200
  • 10:$3.9300
  • 100:$3.4000
  • 250:$3.2300
  • 500:$2.9000
FGA50N100BNTDTU
DISTI # 8070751P		ON SemiconductorIGBTFAIRCHILDFGA50N100BNTDTU, TU432
  • 200:£2.1050
  • 100:£2.2000
  • 40:£2.3550
  • 10:£2.6900
FGA50N100BNTDTU
DISTI # FGA50N100BNTDTU		ON SemiconductorTransistor: IGBT,1kV,35A,63W,TO3P416
  • 1:$4.5700
  • 3:$4.2400
  • 10:$3.4700
  • 30:$3.0200
Imagen Parte # Descripción
MJE243G

Mfr.#: MJE243G

OMO.#: OMO-MJE243G

 Bipolar Transistors - BJT 4A 100V 15W NPN
STTH806TTI

Mfr.#: STTH806TTI

OMO.#: OMO-STTH806TTI

 Rectifiers 8.0 Amp 600 Volt
MUR3060WTG

Mfr.#: MUR3060WTG

OMO.#: OMO-MUR3060WTG

 Rectifiers 600V 30A UltraFast
STTH3003CW

Mfr.#: STTH3003CW

OMO.#: OMO-STTH3003CW

 Rectifiers 2x15 Amp 300 Volt
STTH1210D

Mfr.#: STTH1210D

OMO.#: OMO-STTH1210D

 Rectifiers Ultrafast recovery high voltage diode
IRF540NPBF

Mfr.#: IRF540NPBF

OMO.#: OMO-IRF540NPBF

 MOSFET MOSFT 100V 33A 44mOhm 47.3nC
MBR1045G

Mfr.#: MBR1045G

OMO.#: OMO-MBR1045G

 Schottky Diodes & Rectifiers 10A 45V
LT1085CT#PBF

Mfr.#: LT1085CT#PBF

OMO.#: OMO-LT1085CT-PBF

 LDO Voltage Regulators 7.5A, 5A, 3A L Drop Pos Adj Regs
FCH125N65S3R0-F155

Mfr.#: FCH125N65S3R0-F155

OMO.#: OMO-FCH125N65S3R0-F155

 MOSFET SUPERFET3 650V 24A 125 mOhm
FCH125N65S3R0-F155

Mfr.#: FCH125N65S3R0-F155

OMO.#: OMO-FCH125N65S3R0-F155-ON-SEMICONDUCTOR

 SUPERFET3 650V TO247 PKG
Disponibilidad
Valores:
427
En orden:
2410
Ingrese la cantidad:
El precio actual de FGA50N100BNTDTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,62 US$
4,62 US$
10
3,93 US$
39,30 US$
100
3,40 US$
340,00 US$
250
3,23 US$
807,50 US$
500
2,90 US$
1 450,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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