PartNumber | FGA40S65SH | FGA40N65SMD | FGA4060ADF |
Description | IGBT Transistors 650V 40A Field Stop Trench IGBT | IGBT Transistors 650V, 40A Field Stop IGBT | IGBT Transistors 650V FS Gen3 Trench IGBT proliferation |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-3PN-3 | TO-3PN | TO-3PN |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | 600 V |
Collector Emitter Saturation Voltage | 1.4 V | 2.5 V | 1.8 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 30 V |
Continuous Collector Current at 25 C | 80 A | 80 A | 80 A |
Pd Power Dissipation | 268 W | 349 W | 238 W |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Series | FGA40S65SH | FGA40N65SMD | FGA4060ADF |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 80 A | - | 80 A |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Gate Emitter Leakage Current | +/- 400 nA | 400 nA | 400 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 450 | 450 | 450 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.225789 oz | 0.225789 oz | 0.225789 oz |