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FGA40N60UFDTU

FGA40N60UFDTU
Mfr. #:
FGA40N60UFDTU
Fabricante:
ON Semiconductor
Descripción:
IGBT 600V 40A 160W TO3P
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGA40N60UFDTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FGA40N60U, FGA40N60, FGA40N6, FGA40N, FGA40, FGA4, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ca Corp
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
***i-Key
IGBT 600V 40A 160W TO3P
***ser
IGBTs Ultrafast IGBT
***i-Key Marketplace
IGBT, 40A, 600V, N-CHANNEL
***S
French Electronic Distributor since 1988
***p One Stop Global
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ure Electronics
IRG4BC40WPBF Series 600 V 20 A N-Channel Latest Generation IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
*** Stop Electro
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Fall Time Max:74ns; Fall Time tf:74ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Electronics
IGBT IRG4BC40UPBF IGBT 600V 40A 160W Through Hole TO-220AB 20A/600V TO-220AB
***p One Stop
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ure Electronics
IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
***itex
Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220
***roFlash
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(2+Tab) D2PAK Tube
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a D2Pak package, D2PAK-3, RoHS
***ure Electronics
IRG4BC40W Series 600 V 40 A Insulated Gate Bipolar Transistor - D2PAK-3
***ment14 APAC
IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:40A; Package / Case:D2-PAK; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:23ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
***ark
Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,32A I(C),to-247Var Rohs Compliant: Yes
***et
Trans IGBT Chip N-CH 600V 32A 3-Pin(3+Tab) TO-3P(N) Rail
***rchild Semiconductor
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***ical
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 40A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins:
***ical
Trans IGBT Chip N-CH 600V 40A 130000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
STGP19NC60HD Series 600 V 19 A Very Fast IGBT Flange Mount - TO-220
***el Electronic
STMICROELECTRONICS STGP19NC60HD IGBT Single Transistor, 40 A, 2.5 V, 130 W, 600 V, TO-220, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
19 A, 600 V, very fast IGBT with Ultrafast diode
***nell
IGBT, N 600V 19A TO-220; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
Parte # Mfg. Descripción Valores Precio
FGA40N60UFDTU
DISTI # FGA40N60UFDTU-ND		ON SemiconductorIGBT 600V 40A 160W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    FGA40N60UFDTU
    DISTI # FGA40N60UFDTU    		ON SemiconductorIGBTs - Bulk (Alt: FGA40N60UFDTU)
    RoHS: Compliant
    Min Qty: 154
    Container: Bulk    		Americas - 0
    • 462:$1.9900
    • 770:$1.9900
    • 1540:$1.9900
    • 154:$2.0900
    • 308:$2.0900
    FGA40N60UFDTU
    DISTI # 512-FGA40N60UFDTU    		ON SemiconductorMotor / Motion / Ignition Controllers & Drivers Ultrafast IGBT
    RoHS: Compliant    		0
      FGA40N60UFDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
      RoHS: Compliant      		142
      • 1000:$2.1500
      • 500:$2.2600
      • 100:$2.3500
      • 25:$2.4500
      • 1:$2.6400
      Imagen Parte # Descripción
      FGA40N65SMD

      Mfr.#: FGA40N65SMD

      OMO.#: OMO-FGA40N65SMD

      		 IGBT Transistors 650V, 40A Field Stop IGBT
      FGA40N65SMD--

      Mfr.#: FGA40N65SMD--

      OMO.#: OMO-FGA40N65SMD---1190

      		 Nuevo y original
      FGA40N120AND

      Mfr.#: FGA40N120AND

      OMO.#: OMO-FGA40N120AND-1190

      		 Nuevo y original
      FGA40N120ANTD

      Mfr.#: FGA40N120ANTD

      OMO.#: OMO-FGA40N120ANTD-1190

      		 Nuevo y original
      FGA40N150D

      Mfr.#: FGA40N150D

      OMO.#: OMO-FGA40N150D-1190

      		 Nuevo y original
      FGA40N60

      Mfr.#: FGA40N60

      OMO.#: OMO-FGA40N60-1190

      		 Nuevo y original
      FGA40N60AND

      Mfr.#: FGA40N60AND

      OMO.#: OMO-FGA40N60AND-1190

      		 Nuevo y original
      FGA40N60UF

      Mfr.#: FGA40N60UF

      OMO.#: OMO-FGA40N60UF-1190

      		 Nuevo y original
      FGA40N60UFD

      Mfr.#: FGA40N60UFD

      OMO.#: OMO-FGA40N60UFD-1190

      		 Nuevo y original
      FGA40N65 650V 40A IGBT

      Mfr.#: FGA40N65 650V 40A IGBT

      OMO.#: OMO-FGA40N65-650V-40A-IGBT-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      3500
      Ingrese la cantidad:
      El precio actual de FGA40N60UFDTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,98 US$
      2,98 US$
      10
      2,84 US$
      28,36 US$
      100
      2,69 US$
      268,65 US$
      500
      2,54 US$
      1 268,65 US$
      1000
      2,39 US$
      2 388,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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