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| PartNumber | FF900R12IP4D | FF900R12IP4 | FF900R12IP4BOSA2 |
| Description | IGBT Modules N-CH 1.2KV 900A | IGBT Modules IGBT-MODULE | IGBT MODULE 1200V 900A |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Continuous Collector Current at 25 C | 900 A | 900 A | - |
| Package / Case | PRIME2 | PRIME2 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tray | Tray | - |
| Height | 38 mm | 38 mm | - |
| Length | 172 mm | 172 mm | - |
| Width | 89 mm | 89 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 3 | 3 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FF900R12IP4DBOSA2 SP000614716 | FF900R12IP4BOSA2 SP000609750 | - |
| Unit Weight | 1.819 lbs | 1.819 lbs | - |
| RoHS | - | Y | - |
| Configuration | - | Dual | - |
| Collector Emitter Saturation Voltage | - | 2.1 V | - |
| Gate Emitter Leakage Current | - | 400 nA | - |
| Pd Power Dissipation | - | 5.1 kW | - |