FF1200R17KE

FF1200R17KE3 vs FF1200R17KE3-B2 vs FF1200R17KE3B2NOSA1

 
PartNumberFF1200R17KE3FF1200R17KE3-B2FF1200R17KE3B2NOSA1
DescriptionIGBT Modules 1700V 1200A DUALIGBT MODULE 1700V 1200A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1700 V--
Collector Emitter Saturation Voltage2 V--
Continuous Collector Current at 25 C1600 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation5.95 kW--
Package / CaseIHM130-10--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height38 mm--
Length140 mm--
Width130 mm--
BrandInfineon Technologies--
Mounting StyleSMD/SMT--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity2--
SubcategoryIGBTs--
Part # AliasesFF1200R17KE3NOSA1 SP000100586--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
FF1200R17KE3 IGBT Modules 1700V 1200A DUAL
FF1200R17KE3NOSA1 IGBT MODULE VCES 1200V 1200A
FF1200R17KE3B2NOSA1 IGBT MODULE 1700V 1200A
FF1200R17KE3 IGBT Modules 1700V 1200A DUAL
FF1200R17KE3_B2 IGBT Modules N-CH 1.7KV 1.7KA
FF1200R17KE3-B2 Nuevo y original
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