FF1200R17K

FF1200R17KE3 vs FF1200R17KE3NOSA1 vs FF1200R17KE3B2NOSA1

 
PartNumberFF1200R17KE3FF1200R17KE3NOSA1FF1200R17KE3B2NOSA1
DescriptionIGBT Modules 1700V 1200A DUALIGBT MODULE VCES 1200V 1200AIGBT MODULE 1700V 1200A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1700 V--
Collector Emitter Saturation Voltage2 V--
Continuous Collector Current at 25 C1600 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation5.95 kW--
Package / CaseIHM130-10--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height38 mm--
Length140 mm--
Width130 mm--
BrandInfineon Technologies--
Mounting StyleSMD/SMT--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity2--
SubcategoryIGBTs--
Part # AliasesFF1200R17KE3NOSA1 SP000100586--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
FF1200R17KP4_B2 IGBT Modules IGBT 1700V 1200A
FF1200R17KE3 IGBT Modules 1700V 1200A DUAL
FF1200R17KE3NOSA1 IGBT MODULE VCES 1200V 1200A
FF1200R17KP4B2NOSA2 IGBT MODULE 1700V 1200A
FF1200R17KE3B2NOSA1 IGBT MODULE 1700V 1200A
FF1200R17KE3 IGBT Modules 1700V 1200A DUAL
FF1200R17KE3_B2 IGBT Modules N-CH 1.7KV 1.7KA
FF1200R17KP4_B2 IGBT Modules IGBT 1700V 1200A
FF1200R17KE3-B2 Nuevo y original
FF1200R17KP4 Nuevo y original
FF1200R17KP4-B2 Nuevo y original
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