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FF1200R17KP4_B2

FF1200R17KP4_B2
Mfr. #:
FF1200R17KP4_B2
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules IGBT 1700V 1200A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FF1200R17KP4_B2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
Embalaje:
Bandeja
Marca:
Infineon Technologies
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
2
Subcategoría:
IGBT
Parte # Alias:
FF1200R17KP4B2NOSA2 SP000941366
Tags
FF1200R17KP, FF1200R17K, FF1200R17, FF1200R1, FF1200R, FF1200, FF120, FF12, FF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.7KV 1700A 10-pin IHM130-1
***ment14 APAC
IGBT, HP, DUAL MOD, 1700V, 1200A; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:1200A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:6.25kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Module; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:6.25kW
***ineon
1700V IHM 130mm Dual IGBT module with soft-switching Trench-IGBT4, enlarged diodes and AlSiC base-plate - The best solution for your traction and industry applications | Summary of Features: Low V(cesat); Enlarged Diode for regenerative operation; 4 kV AC 1min Insulation; AlSiC Base Plate for increased Thermal Cycling Capability; UL recognised; High Power and Thermal Cycling Capability | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav
Parte # Mfg. Descripción Valores Precio
FF1200R17KP4_B2
DISTI # FF1200R17KP4_B2		Infineon Technologies AGTrans IGBT Module N-CH 1.7KV 1700A 10-pin IHM130-1 (Alt: FF1200R17KP4_B2)
RoHS: Not Compliant
Min Qty: 2		Asia - 0
  • 2:$1,297.1313
  • 4:$1,261.1000
  • 6:$1,227.0162
  • 10:$1,194.7263
  • 20:$1,179.2103
  • 50:$1,164.0923
  • 100:$1,149.3569
FF1200R17KP4B2NOSA2
DISTI # FF1200R17KP4B2NOSA2		Infineon Technologies AGTRACTION - Trays (Alt: FF1200R17KP4B2NOSA2)
RoHS: Not Compliant
Min Qty: 2
Container: Tray		Americas - 0
  • 2:$1,308.0000
  • 4:$1,261.0000
  • 8:$1,215.0000
  • 12:$1,174.0000
  • 20:$1,153.0000
FF1200R17KP4_B2
DISTI # 641-FF1200R17KP4_B2		Infineon Technologies AGIGBT Modules IGBT 1700V 1200A4
  • 1:$1,134.9900
  • 5:$1,116.8500
Imagen Parte # Descripción
90143-0010

Mfr.#: 90143-0010

OMO.#: OMO-90143-0010-410

 Headers & Wire Housings 2.54MM CGRIDIII HSG 10P DR W/O POL BTTN
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de FF1200R17KP4_B2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1 134,99 US$
1 134,99 US$
5
1 116,85 US$
5 584,25 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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