FF1200R12K

FF1200R12KE3 vs FF1200R12KE3NOSA1 vs FF1200R12KL4C

 
PartNumberFF1200R12KE3FF1200R12KE3NOSA1FF1200R12KL4C
DescriptionIGBT Modules 1200V 1200A IGBT ModuleIGBT MODULE VCES 1200V 1200A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V--
Continuous Collector Current at 25 C1200 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation5 kW--
Package / CaseIHM 130X140-10--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height38 mm--
Length140 mm--
Width130 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity2--
SubcategoryIGBTs--
Part # AliasesFF1200R12KE3NOSA1 SP000100572--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
FF1200R12KE3 IGBT Modules 1200V 1200A IGBT Module
FF1200R12KE3NOSA1 IGBT MODULE VCES 1200V 1200A
FF1200R12KE3 IGBT Modules 1200V 1200A IGBT Module
FF1200R12KL4C Nuevo y original
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