FDN308

FDN308P vs FDN308 vs FDN308P , 1N5241BRL

 
PartNumberFDN308PFDN308FDN308P , 1N5241BRL
DescriptionMOSFET P-Ch PowerTrench Specified 2.5V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current1.5 A--
Rds On Drain Source Resistance86 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 mW (1/2 W)--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.12 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDN308P--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.4 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min12 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns--
Typical Turn On Delay Time8 ns--
Part # AliasesFDN308P_NL--
Unit Weight0.001058 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDN308P MOSFET P-Ch PowerTrench Specified 2.5V
FDN308P_F154 MOSFET Multi Market MOSFET
FDN308 Nuevo y original
FDN308P , 1N5241BRL Nuevo y original
FDN308P NL Nuevo y original
FDN308P-NL , 1N5241B-TAP Nuevo y original
FDN308P-NL/308 Nuevo y original
FDN308P/308F Nuevo y original
FDN308P_G Nuevo y original
FDN308P-CUT TAPE Nuevo y original
ON Semiconductor
ON Semiconductor
FDN308P Nuevo y original
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