FDI

FDI038AN06A0 vs FDI030N06 vs FDI040N06

 
PartNumberFDI038AN06A0FDI030N06FDI040N06
DescriptionMOSFET 60V 80a 0.0038 Ohms/VGS=10VMOSFET NCH 60V 3.0MohmMOSFET PT3 Low Qg 60V, 4.0Mohm
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSEYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-262-3TO-262-3TO-262-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current80 A193 A168 A
Rds On Drain Source Resistance3.5 mOhms3.2 mOhms3.2 mOhms
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation310 W231 W231 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
TradenamePowerTrenchPowerTrench-
PackagingTubeTubeTube
Height7.88 mm7.88 mm7.88 mm
Length10.29 mm10.29 mm10.29 mm
SeriesFDI038AN06A0FDI030N06FDI040N06
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeMOSFETN-Channel MOSFETN-Channel MOSFET
Width4.83 mm4.83 mm4.83 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Fall Time60 ns33 ns24 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time144 ns178 ns40 ns
Factory Pack Quantity800100050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time34 ns54 ns55 ns
Typical Turn On Delay Time17 ns39 ns30 ns
Part # AliasesFDI038AN06A0_NL--
Unit Weight0.073511 oz0.084199 oz0.073511 oz
Forward Transconductance Min-154 S169 S
  • Empezar con
  • FDI 49
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDI045N10A-F102 MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm
FDI038AN06A0 MOSFET 60V 80a 0.0038 Ohms/VGS=10V
FDI030N06 MOSFET NCH 60V 3.0Mohm
FDI150N10 MOSFET 100V N-Channel PowerTrench
FDI3632 MOSFET 100V 80a 0.009 Ohms/VGS=10V
FDI040N06 MOSFET PT3 Low Qg 60V, 4.0Mohm
FDI33N25TU MOSFET TBD
FDI2532 MOSFET 150V N-Ch UltraFET Trench
FDI18-187Q Terminals FEM DISCNCT NYL INS HIGHLAND BAG, 25/BAG
FDI14-187Q Terminals FEM DISCNCT NYL INS HIGHLAND BAG, 25/BAG
FDI10-250Q Terminals FEM DISCNCT NYL INS HIGHLAND BAG, 25/BAG
FDI029LS Nuevo y original
FDI0302-100K Nuevo y original
FDI0302-R10M-C01 Nuevo y original
FDI038AN Nuevo y original
FDI038AN06A0_NL Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB
FDI038AN06AD Nuevo y original
FDI038AN06AO Nuevo y original
FDI038AN06AO 38N06 Nuevo y original
FDI038N06AO Nuevo y original
FDI044AN03L Nuevo y original
FDI045N10AF102 Nuevo y original
FDI045N10A_F102 100V 4.5MOHM I2PAK 3L JEDEC
FDI047AN08 Nuevo y original
FDI047AN08AO Nuevo y original
FDI075N15A Nuevo y original
FDI1394P11AEC Nuevo y original
FDI18-250C Nuevo y original
FDI22AN06LAO Nuevo y original
FDI32N12 Nuevo y original
FDI33N25 Nuevo y original
FDI3532 Nuevo y original
FDI47AN08A0 Nuevo y original
3M
3M
FDI14-187Q Terminals FEM DISCNCT NYL INS HIGHLAND BAG, 25/BAG
FDI18-250Q Terminals FEM DISCNCT NYL INS HIGHLAND BAG, 25/BAG
FDI18-187Q Terminals FEM DISCNCT NYL INS HIGHLAND BAG, 25/BAG
FDI14-250Q Terminals FEM DISCNCT NYL INS HIGHLAND BAG, 25/BAG
ON Semiconductor
ON Semiconductor
FDI150N10 MOSFET N-CH 100V 57A I2PAK
FDI025N06 MOSFET N-CH 60V 265A TO-262
FDI030N06 MOSFET N-CH 60V 120A I2PAK
FDI038AN06A0 MOSFET N-CH 60V 80A TO-262AB
FDI040N06 MOSFET N-CH 60V 120A I2PAK
FDI045N10A MOSFET N-CH 100V 120A I2PAK-3
FDI045N10A-F102 MOSFET N-CH 100V 120A I2PAK-3
FDI047AN08A0 MOSFET N-CH 75V 80A TO-262AB
FDI2532 MOSFET N-CH 150V 79A TO-262AB
FDI33N25TU MOSFET N-CH 250V 33A I2PAK
FDI3632 MOSFET N-CH 100V 80A TO-262AB
FDI3652 MOSFET N-CH 100V 61A TO-262AA
FDI8441 MOSFET N-CH 40V 80A TO-262AB
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