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| PartNumber | FDD16AN08A0 | FDD1600N10ALZ | FDD1600N10ALZD |
| Description | MOSFET 75V 50a .16Ohms/VGS=1V | MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND | MOSFET 100V, 6.8A, 160mOhm N-Channel BoostPak |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-5 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | 100 V | 100 V |
| Id Continuous Drain Current | 50 A | 6.8 A | 6.8 A |
| Rds On Drain Source Resistance | 16 mOhms | 175 mOhms | 160 mOhms |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Pd Power Dissipation | 135 W | 14.9 W | 14.9 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | PowerTrench | PowerTrench | PowerTrench |
| Packaging | Reel | Reel | Reel |
| Height | 2.39 mm | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm | 6.73 mm |
| Series | FDD16AN08A0 | FDD1600N10ALZ | FDD1600N10ALZD |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 22 ns | 14 ns | 2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 54 ns | 14 ns | 2 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 32 ns | 13 ns | 13 ns |
| Typical Turn On Delay Time | 8 ns | 7 ns | 7 ns |
| Part # Aliases | FDD16AN08A0_NL | - | - |
| Unit Weight | 0.009184 oz | 0.009184 oz | 0.009184 oz |
| Vgs th Gate Source Threshold Voltage | - | 2.8 V | - |
| Qg Gate Charge | - | 3.61 nC | 2.71 nC |
| Forward Transconductance Min | - | 34 S | 19.6 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD16AN08A0 | MOSFET 75V 50a .16Ohms/VGS=1V | |
| FDD1600N10ALZ | MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND | ||
| FDD16AN08A0-F085 | MOSFET Trans N-Ch 75V 9A | ||
| FDD1600N10ALZD | MOSFET 100V, 6.8A, 160mOhm N-Channel BoostPak | ||
ON Semiconductor |
FDD1600N10ALZ | MOSFET N CH 100V 6.8A TO252-3 | |
| FDD1600N10ALZD | MOSFET N-CH 100V 6.8A TO252-5L | ||
| FDD16AN08A0 | MOSFET N-CH 75V 50A D-PAK | ||
| FDD16AN08A0_NF054 | MOSFET N-CH 75V 50A DPAK | ||
| FDD16AN08A0-F085 | MOSFET N-CH 75V 50A DPAK | ||
| FDD16AN08 | Nuevo y original | ||
| FDD16AN08A | Nuevo y original | ||
| FDD16AN08A0 F054 | Nuevo y original | ||
| FDD16AN08A0 IRFR2407 | Nuevo y original | ||
| FDD16AN08A0_F085 | Trans MOSFET N-CH 75V 9A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD16AN08A0-F085) | ||
| FDD16AN08A0_NL | Power Field-Effect Transistor, 9A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| FDD16AN08AO | Nuevo y original | ||
| FDD16AN08_F085 | Nuevo y original | ||
| FDD16ANN08A0 | Nuevo y original | ||
| FDD16AN08A0-CUT TAPE | Nuevo y original |