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FDD1600N10ALZ

FDD1600N10ALZ
Mfr. #:
FDD1600N10ALZ
Fabricante:
ON Semiconductor
Descripción:
MOSFET N CH 100V 6.8A TO252-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDD1600N10ALZ Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET - Single
Serie
PowerTrenchR
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.009184 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3, DPak (2 Leads + Tab), SC-63
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
TO-252, (D-Pak)
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
14.9W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
225pF @ 50V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
6.8A (Tc)
Rds-On-Max-Id-Vgs
160 mOhm @ 3.4A, 10V
Vgs-th-Max-Id
2.8V @ 250μA
Puerta-Carga-Qg-Vgs
3.61nC @ 10V
Disipación de potencia Pd
14.9 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
14 ns
Hora de levantarse
14 ns
Id-corriente-de-drenaje-continua
6.8 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.8 V
Resistencia a la fuente de desagüe de Rds
175 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
13 ns
Tiempo de retardo de encendido típico
7 ns
Qg-Gate-Charge
3.61 nC
Transconductancia directa-Mín.
34 S
Tags
FDD16, FDD1, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel PowerTrench® MOSFET 100V, 6.8A, 160mΩ
***ark
PT5 100V LL ZENER 150MOHM GREEN COMPOUND - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
***ical
Trans MOSFET N-CH 100V 6.8A 3-Pin(2+Tab) TO-252 T/R
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Parte # Mfg. Descripción Valores Precio
FDD1600N10ALZ
DISTI # FDD1600N10ALZCT-ND		ON SemiconductorMOSFET N CH 100V 6.8A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1718In Stock
  • 1000:$0.3807
  • 500:$0.4723
  • 100:$0.6325
  • 10:$0.8160
  • 1:$0.9300
FDD1600N10ALZ
DISTI # FDD1600N10ALZDKR-ND		ON SemiconductorMOSFET N CH 100V 6.8A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1718In Stock
  • 1000:$0.3807
  • 500:$0.4723
  • 100:$0.6325
  • 10:$0.8160
  • 1:$0.9300
FDD1600N10ALZ
DISTI # FDD1600N10ALZTR-ND		ON SemiconductorMOSFET N CH 100V 6.8A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.3363
FDD1600N10ALZD
DISTI # FDD1600N10ALZDCT-ND		ON SemiconductorMOSFET N-CH 100V 6.8A TO252-5L
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDD1600N10ALZD
    DISTI # FDD1600N10ALZDDKR-ND    		ON SemiconductorMOSFET N-CH 100V 6.8A TO252-5L
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDD1600N10ALZD
      DISTI # FDD1600N10ALZDTR-ND      		ON SemiconductorMOSFET N-CH 100V 6.8A TO252-5L
      RoHS: Compliant
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
        FDD1600N10ALZ
        DISTI # FDD1600N10ALZ        		ON SemiconductorTrans MOSFET N-CH 100V 6.8A 3-Pin DPAK T/R (Alt: FDD1600N10ALZ)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel        		Asia - 0
        • 2500:$0.3061
        • 5000:$0.2943
        • 7500:$0.2834
        • 12500:$0.2733
        • 25000:$0.2639
        • 62500:$0.2551
        • 125000:$0.2509
        FDD1600N10ALZ
        DISTI # FDD1600N10ALZ        		ON SemiconductorTrans MOSFET N-CH 100V 6.8A 3-Pin DPAK T/R - Tape and Reel (Alt: FDD1600N10ALZ)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
        • 2500:$0.2639
        • 5000:$0.2619
        • 10000:$0.2579
        • 15000:$0.2549
        • 25000:$0.2489
        FDD1600N10ALZ
        DISTI # FDD1600N10ALZ        		ON SemiconductorTrans MOSFET N-CH 100V 6.8A 3-Pin DPAK T/R (Alt: FDD1600N10ALZ)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel        		Europe - 0
        • 2500:€0.3899
        • 5000:€0.3189
        • 10000:€0.2919
        • 15000:€0.2699
        • 25000:€0.2509
        FDD1600N10ALZD
        DISTI # FDD1600N10ALZD        		ON SemiconductorTrans MOSFET N-CH 100V 6.8A 5-Pin TO-252 T/R - Tape and Reel (Alt: FDD1600N10ALZD)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
          FDD1600N10ALZ
          DISTI # 46AC0764          		ON SemiconductorMOSFET, N-CH, 100V, 6.8A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.124ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes2385
          • 1000:$0.3460
          • 500:$0.3740
          • 250:$0.4000
          • 100:$0.4270
          • 50:$0.5020
          • 25:$0.5770
          • 10:$0.6520
          • 1:$0.7860
          FDD1600N10ALZ
          DISTI # 63W2849          		ON SemiconductorFET 100V 150.0 MOHM DPAK / REEL0
          • 25000:$0.2600
          • 10000:$0.2680
          • 2500:$0.2780
          • 1:$0.2800
          FDD1600N10ALZ
          DISTI # 512-FDD1600N10ALZ          		ON SemiconductorMOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND
          RoHS: Compliant          		2003
          • 1:$0.7500
          • 10:$0.6270
          • 100:$0.4040
          • 1000:$0.3240
          FDD1600N10ALZD
          DISTI # 512-FDD1600N10ALZD          		ON SemiconductorMOSFET 100V, 6.8A, 160mOhm N-Channel BoostPak
          RoHS: Compliant          		989
          • 1:$0.8300
          • 10:$0.7060
          • 100:$0.5420
          • 500:$0.4790
          • 1000:$0.3780
          • 2500:$0.3360
          • 10000:$0.3230
          • 25000:$0.3130
          FDD1600N10ALZ
          DISTI # 8648041P          		ON SemiconductorMOSFET N-CH 100V 6.8A POWERTRENCH DPAK, RL1525
          • 2500:£0.2080
          • 1250:£0.2430
          • 250:£0.2730
          • 125:£0.3020
          FDD1600N10ALZFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.8A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant          		Europe - 2500
            FDD1600N10ALZ
            DISTI # 2825152            		ON SemiconductorMOSFET, N-CH, 100V, 6.8A, TO-252-3
            RoHS: Compliant            		2425
            • 500:£0.2700
            • 250:£0.2900
            • 100:£0.3110
            • 25:£0.4980
            • 5:£0.5440
            FDD1600N10ALZ
            DISTI # 2825152            		ON SemiconductorMOSFET, N-CH, 100V, 6.8A, TO-252-3
            RoHS: Compliant            		2385
            • 5000:$0.4060
            • 1000:$0.4300
            • 500:$0.4660
            • 250:$0.5680
            • 100:$0.6930
            • 25:$1.0100
            • 5:$1.1800
            Imagen Parte # Descripción
            FDD1600N10ALZ

            Mfr.#: FDD1600N10ALZ

            OMO.#: OMO-FDD1600N10ALZ

            		 MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND
            FDD1600N10ALZD

            Mfr.#: FDD1600N10ALZD

            OMO.#: OMO-FDD1600N10ALZD

            		 MOSFET 100V, 6.8A, 160mOhm N-Channel BoostPak
            FDD1600N10ALZ

            Mfr.#: FDD1600N10ALZ

            OMO.#: OMO-FDD1600N10ALZ-ON-SEMICONDUCTOR

            		 MOSFET N CH 100V 6.8A TO252-3
            FDD1600N10ALZD

            Mfr.#: FDD1600N10ALZD

            OMO.#: OMO-FDD1600N10ALZD-ON-SEMICONDUCTOR

            		 MOSFET N-CH 100V 6.8A TO252-5L
            Disponibilidad
            Valores:
            Available
            En orden:
            4000
            Ingrese la cantidad:
            El precio actual de FDD1600N10ALZ es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            0,37 US$
            0,37 US$
            10
            0,35 US$
            3,55 US$
            100
            0,34 US$
            33,60 US$
            500
            0,32 US$
            158,65 US$
            1000
            0,30 US$
            298,70 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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