 |  | | |
| PartNumber | FDBL86561-F085 | FDBL86561_F085 | FDBL86563 |
| Description | MOSFET NMOS TOLL 60V 1.1 MOHM | IGBT Transistors MOSFET N-Channel Power Trench MOSFET | |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | H-PSOF-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 300 A | - | - |
| Rds On Drain Source Resistance | 2.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 170 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 429 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.4 mm | - | - |
| Length | 10.48 mm | - | - |
| Series | FDBL86561_F085 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.9 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 41 ns | 41 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 61 ns | 61 ns | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 80 ns | 80 ns | - |
| Typical Turn On Delay Time | 45 ns | 45 ns | - |
| Part # Aliases | FDBL86561_F085 | - | - |
| Unit Weight | 0.029983 oz | 0.029986 oz | - |
| Package Case | - | MO-299A-8 | - |
| Pd Power Dissipation | - | 429 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 300 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Rds On Drain Source Resistance | - | 2.2 mOhms | - |
| Qg Gate Charge | - | 170 nC | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDBL86566-F085 | MOSFET 60V N-Channel Power Trench MOSFET | |
| FDBL86561-F085 | MOSFET NMOS TOLL 60V 1.1 MOHM | ||
| FDBL86563-F085 | MOSFET 60V 240A TO-LL N-Chnl PowerTrench | ||
| FDBL86561_F085 | IGBT Transistors MOSFET N-Channel Power Trench MOSFET | ||
| FDBL86563 | Nuevo y original | ||
ON Semiconductor |
FDBL86561-F085 | MOSFET N-CH 60V 300A PSOF8 | |
| FDBL86566-F085 | MOSFET N-CH 60V 240A MO299A | ||
| FDBL86563-F085 | MOSFET N-CH 60V 240A PSOF8 |