FDB816

FDB8160-F085 vs FDB8160_F085 vs FDB8160

 
PartNumberFDB8160-F085FDB8160_F085FDB8160
DescriptionMOSFET 30V N-Channel PowerTrench MOSFETIGBT Transistors MOSFET 30V N-Channel PowerTrench MOSFETMOSFET N-CH 30V 80A D2PAK
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance1.5 mOhms--
Vgs th Gate Source Threshold Voltage2.9 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge187 nC--
Pd Power Dissipation254 W--
ConfigurationSingle--
TradenamePowerTrench--
PackagingReelReel-
Height4.83 mm--
Length10.67 mm--
SeriesFDB8160_F085--
Transistor Type1 N-Channel1 N-Channel-
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time27 ns27 ns-
Product TypeMOSFET--
Rise Time18.9 ns18.9 ns-
Factory Pack Quantity800--
SubcategoryMOSFETs--
Part # AliasesFDB8160_F085--
Unit Weight0.046296 oz0.046296 oz-
Package Case-TO-252-3-
Pd Power Dissipation-254 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-80 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-2.9 V-
Rds On Drain Source Resistance-1.5 mOhms-
Qg Gate Charge-187 nC-
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB8160-F085 MOSFET 30V N-Channel PowerTrench MOSFET
FDB8160_F085 IGBT Transistors MOSFET 30V N-Channel PowerTrench MOSFET
ON Semiconductor
ON Semiconductor
FDB8160 MOSFET N-CH 30V 80A D2PAK
FDB8160-F085 MOSFET N-CH 30V 80A D2PAK
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