FDB8160_F085

FDB8160_F085
Mfr. #:
FDB8160_F085
Fabricante:
Fairchild Semiconductor
Descripción:
IGBT Transistors MOSFET 30V N-Channel PowerTrench MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDB8160_F085 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Unidad de peso
0.046296 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
254 W
Otoño
27 ns
Hora de levantarse
18.9 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
80 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
2.9 V
Resistencia a la fuente de desagüe de Rds
1.5 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
187 nC
Tags
FDB816, FDB81, FDB8, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET 30V, 80A, 1.8mΩ
*** Stop Electro
Power Field-Effect Transistor, 80A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ical
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ
***r Electronics
Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***i-Key
MOSFET N-CH 30V 75A D2PAK
***Yang
TO-263AB,SINGLE,NCH,30V,0.0023 OHM LOGIC LEVEL DENSE TRENCH - Bulk
***nell
MOSFET, N, SMD, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
***emi
N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ
***ure Electronics
N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
***et
Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ure Electronics
Single N-Channel 30 V 9 mOhm 27 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***Yang
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) D2PAK - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 30V, 90A, 9 mOhm, 27 nC Qg, D2-Pak
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ure Electronics
Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - D2PAK
*** Source Electronics
Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 87A D2PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 47uF 10volts *Derate Voltage/Temp
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:87A; On Resistance, Rds(on):6.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
FDB8160-F085
DISTI # FDB8160-F085TR-ND
ON SemiconductorMOSFET N-CH 30V 80A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
    FDB8160-F085
    DISTI # FDB8160-F085CT-ND
    ON SemiconductorMOSFET N-CH 30V 80A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      FDB8160-F085
      DISTI # FDB8160-F085DKR-ND
      ON SemiconductorMOSFET N-CH 30V 80A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        FDB8160_F085
        DISTI # FDB8160-F085
        ON SemiconductorTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FDB8160-F085)
        Min Qty: 234
        Container: Bulk
        Americas - 0
        • 234:$1.2900
        • 468:$1.2900
        • 702:$1.2900
        • 1170:$1.2900
        • 2340:$1.2900
        FDB8160-F085
        DISTI # 48AC0890
        ON SemiconductorNMOS D2PAK 30V 1.8 MOHM / REEL0
          FDB8160-F085Fairchild Semiconductor CorporationPower Field-Effect Transistor, 80A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant
          781
          • 1000:$1.4100
          • 500:$1.4800
          • 100:$1.5400
          • 25:$1.6100
          • 1:$1.7300
          Imagen Parte # Descripción
          FDB8160-F085

          Mfr.#: FDB8160-F085

          OMO.#: OMO-FDB8160-F085

          MOSFET 30V N-Channel PowerTrench MOSFET
          FDB8160_F085

          Mfr.#: FDB8160_F085

          OMO.#: OMO-FDB8160-F085-126

          IGBT Transistors MOSFET 30V N-Channel PowerTrench MOSFET
          FDB8160

          Mfr.#: FDB8160

          OMO.#: OMO-FDB8160-ON-SEMICONDUCTOR

          MOSFET N-CH 30V 80A D2PAK
          FDB8160-F085

          Mfr.#: FDB8160-F085

          OMO.#: OMO-FDB8160-F085-ON-SEMICONDUCTOR

          MOSFET N-CH 30V 80A D2PAK
          Disponibilidad
          Valores:
          Available
          En orden:
          3000
          Ingrese la cantidad:
          El precio actual de FDB8160_F085 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          1,94 US$
          1,94 US$
          10
          1,84 US$
          18,38 US$
          100
          1,74 US$
          174,15 US$
          500
          1,64 US$
          822,40 US$
          1000
          1,55 US$
          1 548,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
          Empezar con
          Top