FDB603

FDB6030BL vs FDB6030 vs FDB6030AL

 
PartNumberFDB6030BLFDB6030FDB6030AL
DescriptionMOSFET N-Channel PowerTrench
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance18 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation60 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min30 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesFDB6030BL_NL--
Unit Weight0.011640 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB6030BL MOSFET N-Channel PowerTrench
FDB6030L MOSFET N-Channel PowerTrench
FDB6030 Nuevo y original
FDB6030AL Nuevo y original
FDB6030BL-NL Nuevo y original
FDB6030BL. Nuevo y original
FDB6030BLFSC Nuevo y original
FDB6030L-NL Nuevo y original
FDB6030LFSC Nuevo y original
FDB6035 Nuevo y original
FDB6035AL MOSFET N-Channel PowerTrench
FDB6035AL-A Nuevo y original
FDB6035AL-NL Nuevo y original
FDB6035L Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FDB6035LFSC Nuevo y original
FDB603AC Nuevo y original
FDB603AL - Bulk (Alt: FDB603AL)
FDB603AL_M Nuevo y original
ON Semiconductor
ON Semiconductor
FDB6030BL MOSFET N-CH 30V 40A TO-263AB
FDB6030L MOSFET N-CH 30V 48A D2PAK
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