FDB603AL

Mfr. #:: FDB603AL
Fabricante:: Rochester Electronics, LLC
Descripción:: - Bulk (Alt: FDB603AL)
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDB603AL Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Tags: FDB603A, FDB603, FDB60, FDB6, FDB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDB603AL Descripción

***S: French Electronic Distributor since 1988

***ser: Not available to order .

***emi: PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ

***ure Electronics: N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA

*** Stop Electro: Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

***nell: MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***emi: PowerTrench® MOSFET, N-Channel, 25V, 35A, 11mΩ

***ure Electronics: N-Channel 25 V 35 A 11 mOhm PowerTrench® Mosfet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 35A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

***inecomponents.com: 25V,35A,8.5 OHM, NCH, IPAK, POWER TRENCH MOSFET

***Yang: TRANS MOSFET N-CH 25V 35A 3PIN TO-251 - Bulk

***r Electronics: Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ure Electronics: Single N-Channel 60 V 0.018 Ohms Flange Mount Power Mosfet - TO-220FP

***p One Stop: Trans MOSFET N-CH 60V 37A 3-Pin(3+Tab) TO-220 Full-Pak

***nell: N CHANNEL MOSFET, 60V, 37A, TO-220; Transistor Polarity: N Channel; Drain Source Voltage Vds: 60V; Continuous Drain Current Id: 37A; On Resistance Rds(on): 0.018ohm; Transistor Mounting: Through Hole; Rds(on) Test Voltage Vgs: 10V; MSL: -

***ure Electronics: Single N-Channel 60 V 14.4 mOhm 32 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

*** Source Electronics: Trans MOSFET N-CH 60V 11A 8-Pin PQFN EP T/R / MOSFET N-CH 60V 40A 8-PQFN

***(Formerly Allied Electronics): MOSFET, 60V, 40A, 14.4 mOhm, 23 nC Qg, PQFN 5x6

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 46 W

***nell: MOSFET, N-CH, 60V, 40A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0114ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 46W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 2 - 1 year; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: Low RDSon (less than 14.4 mOhms) Lowers Conduction Losses; Low Thermal Resistance to PCB (less than 2.7C/W) Enables better thermal dissipation; 100% Rg tested for Increased Reliability; Low Profile (less than 0.9 mm) results in Increased Power Density; Industry-Standard Pinout for Multi-Vendor Compatibility; Compatible with Existing Surface Mount Techniques for Easier Manufacturing; Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen; MSL1, Industrial Qualification results in Increased Reliability | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***o-Tech: N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11

***ure Electronics: N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3

***ark: MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDB603AL DISTI # FDB603AL	ON Semiconductor	- Bulk (Alt: FDB603AL) Min Qty: 298 Container: Bulk	Americas - 0	2980:$1.0369 1490:$1.0629 894:$1.0759 596:$1.0899 298:$1.0979
FDB603AL DISTI # 512-FDB603AL	ON Semiconductor	MOSFET RoHS: Compliant	0
FDB603AL_Q DISTI # 512-FDB603AL_Q	ON Semiconductor	MOSFET RoHS: Not compliant	0
FDB603AL	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 33A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant	39200	1000:$1.1100 500:$1.1600 100:$1.2100 25:$1.2600 1:$1.3600

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: FDB6030BL OMO.#: OMO-FDB6030BL	MOSFET N-Channel PowerTrench
	Mfr.#: FDB6030L OMO.#: OMO-FDB6030L	MOSFET N-Channel PowerTrench
	Mfr.#: FDB6021 OMO.#: OMO-FDB6021-1190	Nuevo y original
	Mfr.#: FDB6030BL-NL OMO.#: OMO-FDB6030BL-NL-1190	Nuevo y original
	Mfr.#: FDB6030L-NL OMO.#: OMO-FDB6030L-NL-1190	Nuevo y original
	Mfr.#: FDB603AC OMO.#: OMO-FDB603AC-1190	Nuevo y original
	Mfr.#: FDB6201P OMO.#: OMO-FDB6201P-1190	Nuevo y original
	Mfr.#: FDB6670AL OMO.#: OMO-FDB6670AL-ON-SEMICONDUCTOR	MOSFET N-CH 30V 80A D2PAK
	Mfr.#: FDB6676S OMO.#: OMO-FDB6676S-1190	MOSFET 30V N-Ch PowerTrench Logic Level
	Mfr.#: FDB6690S OMO.#: OMO-FDB6690S-ON-SEMICONDUCTOR	MOSFET N-CH 30V 42A TO-263AB

Disponibilidad

Valores:: Available
En orden:: 3500
Ingrese la cantidad:

El precio actual de FDB603AL es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,56 US$~~; ~~1,56 US$~~

10: ~~1,48 US$~~; ~~14,78 US$~~

100: ~~1,40 US$~~; ~~139,98 US$~~

500: ~~1,32 US$~~; ~~661,00 US$~~

1000: ~~1,24 US$~~; ~~1 244,30 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

FDB603A 3
FDB603 18
FDB60 24
FDB6 51
FDB 624

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FDB603AL

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes