FDB5

FDB52N20TM vs FDB52N20 vs FDB52N20 52N20 52A 200

 
PartNumberFDB52N20TMFDB52N20FDB52N20 52N20 52A 200
DescriptionMOSFET 200V N-Ch MOSFET
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current52 A--
Rds On Drain Source Resistance49 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFDB52N20--
Transistor Type1 N-Channel--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min35 S--
Fall Time150 ns--
Product TypeMOSFET--
Rise Time160 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time150 ns--
Typical Turn On Delay Time30 ns--
Unit Weight0.046296 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB52N20TM MOSFET 200V N-Ch MOSFET
FDB5800 MOSFET 60V N-Ch Logic PowerTrench MOSFET
FDB5690 MOSFET 60V N-Channel Power Trench
FDB52N20 Nuevo y original
FDB52N20 52N20 52A 200 Nuevo y original
FDB52N20TM-NL Nuevo y original
FDB54N20 Nuevo y original
FDB55N06 Nuevo y original
FDB5645-NL Nuevo y original
FDB5680 Power Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FDB5685 Nuevo y original
FDB5686 Nuevo y original
FDB5690-NL Nuevo y original
FDB5800-NL Nuevo y original
FDB5800/BKN Nuevo y original
FDB5800TM Nuevo y original
FDB5N90 Nuevo y original
FDB52N20TM-CUT TAPE Nuevo y original
FDB5800-CUT TAPE Nuevo y original
ON Semiconductor
ON Semiconductor
FDB52N20TM MOSFET N-CH 200V 52A D2PAK
FDB5645 MOSFET N-CH 60V 80A TO-263AB
FDB5690 MOSFET N-CH 60V 32A TO-263AB
FDB5800 MOSFET N-CH 60V 80A D2PAK
FDB5800_F085 MOSFET N-CH 60V 80A D2PAK
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