FDB5680

Mfr. #:: FDB5680
Fabricante:: Rochester Electronics, LLC
Descripción:: Power Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDB5680 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
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Atributo del producto
Valor de atributo

Fabricante: FAIRCHILD

categoria de producto: Chips de IC

Tags: FDB568, FDB56, FDB5, FDB

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDB5680 Descripción

***ser: Not available to order USE 512-FDB20AN06A0

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***emi: N-Channel PowerTrench® SyncFET™ 30V, 42A, 3mΩ

***r Electronics: Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***ure Electronics: Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-252AA

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 12.6 Milliohms,ID 43A,D-Pak,PD 71W,VGS+/-20V

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:43A; On Resistance Rds(On):0.0126Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11.1 Milliohms;ID 51A;TO-220AB;PD 80W;-55deg

***ure Electronics: Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-220AB Tube

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 80 W

***ment14 APAC: MOSFET, N, 55V, 51A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:80W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Junction to Case Thermal Resistance A:1.87°C/W; On State resistance @ Vgs = 10V:13.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:80W; Power Dissipation Pd:80W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 60V 43A 15,8mΩ 175°C TO-220 IRFB3806PBF

*** Source Electronics: Trans MOSFET N-CH 60V 43A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 43A TO-220AB

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***(Formerly Allied Electronics): MOSFET, 60V, 43A, 16.2 MOHM, 22 NC QG, TO-220AB

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

***ment14 APAC: MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-220AB; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: Single N-Channel Logic Level Power MOSFET 60V, 46A, 16mΩ

***(Formerly Allied Electronics): NTD5865NLT4G N-channel MOSFET Transistor; 40 A; 60 V; 3-Pin DPAK

***ure Electronics: N-Channel 60 V 16 mOhm 52 W Surface Mount Power MosFet - TO-252-3

***nell: MOSFET, N-CH, 60V, 46A, 71W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016oh; Available until stocks are exhausted Alternative available

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 46 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 19 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 12.4 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 71

***emi: N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ

***ure Electronics: N-Channel 40 V 50 A 8.5 mOhm Surface Mount PowerTrench® Mosfet -TO-263AB

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 910Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 910 OHM 1% 1/10W 0402

***ment14 APAC: MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

***rchild Semiconductor: This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDB5680 DISTI # 512-FDB5680	ON Semiconductor	MOSFET RoHS: Not compliant	0
FDB5680	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	8000	1000:$1.5800 500:$1.6600 100:$1.7300 25:$1.8100 1:$1.9400
FDB5680	Fairchild Semiconductor Corporation	40 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	609	287:$0.6250 51:$0.7000 1:$2.0000

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Disponibilidad

Valores:: Available
En orden:: 5000
Ingrese la cantidad:

El precio actual de FDB5680 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,94 US$~~; ~~0,94 US$~~

10: ~~0,89 US$~~; ~~8,91 US$~~

100: ~~0,84 US$~~; ~~84,38 US$~~

500: ~~0,80 US$~~; ~~398,45 US$~~

1000: ~~0,75 US$~~; ~~750,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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FDB5680

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes