 |  | | |
| PartNumber | F3L150R07W2E3_B11 | F3L150R07W2E3B11BOMA1 | F3L150R12W2H3B11BPSA1 |
| Description | IGBT Modules IGBT MODULES 650V 150A | IGBT MODULE VCES 600V 150A | IGBT MODULE VCES 600V 150A |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | IGBT-Inverter | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.45 V | - | - |
| Continuous Collector Current at 25 C | 150 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 335 W | - | - |
| Package / Case | Module | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | SMD/SMT | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 15 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | F3L150R07W2E3B11BOMA1 SP000638568 | - | - |
| Unit Weight | 1.375685 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
F3L15MR12W2M1B69BOMA1 | Discrete Semiconductor Modules | |
| F3L150R12W2H3_B11 | IGBT Modules | ||
| F3L150R07W2E3_B11 | IGBT Modules IGBT MODULES 650V 150A | ||
| F3L15R12W2H3_B27 | IGBT Modules | ||
| F3L150R07W2E3B11BOMA1 | IGBT MODULE VCES 600V 150A | ||
| F3L150R12W2H3B11BPSA1 | IGBT MODULE VCES 600V 150A | ||
| F3L15R12W2H3B27BOMA1 | IGBT MODULE VCES 1200V 15A | ||
| F3L150R07W2E3-B11 | Nuevo y original | ||
| F3L150R07W2E3_B11 , 1KSM | Nuevo y original | ||
| F3L150R07W2E3_B11-ENG | Nuevo y original | ||
| F3L150R12W2H3 B11 | Nuevo y original | ||
| F3L150R12W2H3_B11 , 1KSM | Nuevo y original | ||
| F3L15R12W2H3_B27 | IGBT Modules | ||
| F3L150R07W2E3_B11 | IGBT Modules IGBT MODULES 650V 150A |