PartNumber | DMTH6004SCTB-13 | DMTH6004SCT | DMTH6004SK3-13 |
Description | MOSFET Enh Mode FET 41V to 60V TO263 | MOSFET MOSFET BVDSS: | MOSFET MOSFET BVDSS: 41V-60V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | TO-263-3 | TO-220-3 | TO-252-3 |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 100 A | - | - |
Rds On Drain Source Resistance | 2.9 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 95.4 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 4.7 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Tube | Reel |
Height | 4.82 mm | - | - |
Length | 10.66 mm | - | - |
Series | DMTH6004 | DMTH6004 | DMTH6004 |
Transistor Type | 1 N-Channel | - | - |
Width | 9.65 mm | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Forward Transconductance Min | - | - | - |
Fall Time | 12 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11.7 ns | - | - |
Factory Pack Quantity | 800 | 50 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 31 ns | - | - |
Typical Turn On Delay Time | 13.2 ns | - | - |
Unit Weight | 0.068654 oz | 0.063493 oz | 0.011993 oz |