PartNumber | DMT8008LSS-13 | DMT8008SPS-13 | DMT8008LPS-13 |
Description | MOSFET MOSFET BVDSS: 61V-100V | MOSFET MOSFET BVDSS: 61V-100V | MOSFET MOSFET BVDSS 61V-100V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Packaging | Reel | Reel | Reel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Technology | - | Si | Si |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | PowerDI5060-8 | PowerDI5060-8 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 80 V | 80 V |
Id Continuous Drain Current | - | 83 A | 83 A |
Rds On Drain Source Resistance | - | 11 mOhms | 7.8 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2 V | 1.3 V |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 26 nC | 41.2 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 1.3 W | 83 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 21 ns | 43.2 ns |
Rise Time | - | 15 ns | 5.4 ns |
Typical Turn Off Delay Time | - | 29 ns | 24.5 ns |
Typical Turn On Delay Time | - | 8 ns | 5.8 ns |