PartNumber | DMT6009LCT | DMT6009LJ3 | DMT6009LFG-13 |
Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 31V-40V | MOSFET 60V N-Ch Enh FET Low Rdson |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | SMD/SMT |
Package / Case | TO-220-3 | TO-251-3 | PowerDI3333-8 |
Packaging | Tube | Tube | Reel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 50 | 75 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.063493 oz | - | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Id Continuous Drain Current | - | 74.5 A | - |
Rds On Drain Source Resistance | - | 12.8 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 700 mV | - |
Vgs Gate Source Voltage | - | 16 V | - |
Qg Gate Charge | - | 33.5 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 83.3 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Fall Time | - | 15.7 ns | - |
Rise Time | - | 8.6 ns | - |
Typical Turn Off Delay Time | - | 35.9 ns | - |
Typical Turn On Delay Time | - | 4.5 ns | - |
Series | - | - | DMT6009 |