 |  |  | |
| PartNumber | DMN4030LK3-13 | DMN4030LK3Q-13 | DMN4030LK3 |
| Description | MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL | MOSFET MOSFET BVDSS: 31V-40V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 13.7 A | 13.7 A | - |
| Rds On Drain Source Resistance | 21 mOhms | 30 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 12.9 nC | 12.9 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 4.18 W | 8.9 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMN40 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | 22.8 S | 22.8 S | - |
| Fall Time | 10.7 ns | 10.7 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12.4 ns | 12.4 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 13.8 ns | 13.8 ns | - |
| Typical Turn On Delay Time | 4.2 ns | 4.2 ns | - |
| Unit Weight | 0.139332 oz | - | - |
| Qualification | - | AEC-Q101 | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN4030LK3-13 | MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL | |
| DMN4030LK3Q-13 | MOSFET MOSFET BVDSS: 31V-40V | ||
| DMN4030LK3 | Nuevo y original | ||
| DMN4030LK3-13 | Darlington Transistors MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL |