DMN320

DMN3200U-7 vs DMN3200U vs DMN3200U-7-CUT TAPE

 
PartNumberDMN3200U-7DMN3200UDMN3200U-7-CUT TAPE
DescriptionMOSFET 650mW 30Vdss
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.2 A--
Rds On Drain Source Resistance90 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation650 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesDMN32--
Transistor Type1 N-Channel--
Width1.3 mm--
BrandDiodes Incorporated--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000282 oz--
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMN3200U-7 MOSFET 650mW 30Vdss
DMN3200U Nuevo y original
DMN3200U-7-F Nuevo y original
DMN3202LFB4-7 Nuevo y original
DMN3200U-7-CUT TAPE Nuevo y original
DMN3200U-7 MOSFET 650mW 30Vdss
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