DMN311

DMN3110S-7 vs DMN3112S-7 vs DMN3110S

 
PartNumberDMN3110S-7DMN3112S-7DMN3110S
DescriptionMOSFET MOSFET BVDSS: 25V-30 SOT23,3KMOSFET N-Ch FET 30V 20A 57mOhm 10V VGS
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current3.3 A5.8 A-
Rds On Drain Source Resistance73 mOhms92 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge8.6 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation740 mW1.4 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesDMN31DMN3112S-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min4.8 mS4.7 S-
Fall Time2.5 ns--
Product TypeMOSFETMOSFET-
Rise Time4.6 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13.1 ns--
Typical Turn On Delay Time2.6 ns--
Unit Weight0.000282 oz0.000282 oz-
Vgs th Gate Source Threshold Voltage-1.9 V-
Height-1 mm-
Length-2.9 mm-
Product-MOSFET Small Signal-
Width-1.3 mm-
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMN3110S-7 MOSFET MOSFET BVDSS: 25V-30 SOT23,3K
DMN3115UDM-7 MOSFET 900mW 30Vdss
DMN3112S-7 MOSFET N-Ch FET 30V 20A 57mOhm 10V VGS
DMN3110S Nuevo y original
DMN3110S-7 Trans MOSFET N-CH 30V 3.3A Automotive 3-Pin SOT-23 T/R
DMN3112S-7 MOSFET N-CH 30V 5.8A SOT23-3
DMN3112S-7-F Nuevo y original
DMN3112SSS Nuevo y original
DMN3112SSS-13 MOSFET N-CH 30V 6A 8SOP
DMN3115UDM Nuevo y original
DMN3115UDM-7 MOSFET 900mW 30Vdss
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