PartNumber | DMN3110S-7 | DMN3112S-7 | DMN3110S |
Description | MOSFET MOSFET BVDSS: 25V-30 SOT23,3K | MOSFET N-Ch FET 30V 20A 57mOhm 10V VGS | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | SOT-23-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 3.3 A | 5.8 A | - |
Rds On Drain Source Resistance | 73 mOhms | 92 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 8.6 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 740 mW | 1.4 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Series | DMN31 | DMN3112S | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Forward Transconductance Min | 4.8 mS | 4.7 S | - |
Fall Time | 2.5 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 4.6 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 13.1 ns | - | - |
Typical Turn On Delay Time | 2.6 ns | - | - |
Unit Weight | 0.000282 oz | 0.000282 oz | - |
Vgs th Gate Source Threshold Voltage | - | 1.9 V | - |
Height | - | 1 mm | - |
Length | - | 2.9 mm | - |
Product | - | MOSFET Small Signal | - |
Width | - | 1.3 mm | - |