DMN3033LSN

DMN3033LSN-7 vs DMN3033LSN vs DMN3033LSN-7-F

 
PartNumberDMN3033LSN-7DMN3033LSNDMN3033LSN-7-F
DescriptionMOSFET N-Channel
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSC-59-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance40 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.4 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.1 mm--
Length3 mm--
ProductMOSFET Small Signal--
SeriesDMN3033--
Transistor Type1 N-Channel--
Width1.6 mm--
BrandDiodes Incorporated--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time7 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time63 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.000282 oz--
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMN3033LSN-7 MOSFET N-Channel
DMN3033LSNQ-7 MOSFET 30V N-Ch Enh FET 20Vgs 6A 1.4W 2.1V
DMN3033LSNQ-13 MOSFET 30V N-Ch Enh FET 20Vgs 6A 1.4W 2.1V
DMN3033LSN Nuevo y original
DMN3033LSN-7-F Nuevo y original
DMN3033LSN-7 MOSFET N-Channel
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