DMN3033LS

DMN3033LSN-7 vs DMN3033LSD-13 vs DMN3033LSNQ-13

 
PartNumberDMN3033LSN-7DMN3033LSD-13DMN3033LSNQ-13
DescriptionMOSFET N-ChannelMOSFET NMOS-DUALMOSFET 30V N-Ch Enh FET 20Vgs 6A 1.4W 2.1V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSC-59-3SO-8SC-59-3
Number of Channels1 Channel2 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current6 A6.9 A-
Rds On Drain Source Resistance40 mOhms22 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.4 W2 W-
ConfigurationSingleDualSingle
Channel ModeEnhancementEnhancement-
PackagingReelReelReel
Height1.1 mm1.5 mm-
Length3 mm5.3 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesDMN3033DMN3033DMN3033
Transistor Type1 N-Channel2 N-Channel1 N-Channel
Width1.6 mm4.1 mm-
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time7 ns30 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time7 ns7 ns-
Factory Pack Quantity3000250010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time63 ns63 ns-
Typical Turn On Delay Time11 ns11 ns-
Unit Weight0.000282 oz0.030018 oz0.000282 oz
Qualification--AEC-Q101
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMN3033LSN-7 MOSFET N-Channel
DMN3033LSNQ-7 MOSFET 30V N-Ch Enh FET 20Vgs 6A 1.4W 2.1V
DMN3033LSD-13 MOSFET NMOS-DUAL
DMN3033LSNQ-13 MOSFET 30V N-Ch Enh FET 20Vgs 6A 1.4W 2.1V
DMN3033LSD MOSFET, NN CH, W DIOD, 30V, 6.9A, SO8
DMN3033LSD-13-F Nuevo y original
DMN3033LSN Nuevo y original
DMN3033LSN-7-F Nuevo y original
DMN3033LSN-7 MOSFET N-Channel
DMN3033LSD-13 MOSFET NMOS-DUAL
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