PartNumber | DMN3016LDN-7 | DMN3016LDN-13 | DMN3016LDN |
Description | MOSFET N-Ch 30V Dual Enh 20Vgss 1.1W 1115pF | MOSFET MOSFET BVDSS: 25V~30V V-DFN3030-8 T&R 10K | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | V-DFN3030-8 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 7.3 A | - | - |
Rds On Drain Source Resistance | 24 mOhms, 24 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 25.1 nC, 25.1 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.6 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | - |
Height | 0.8 mm | - | - |
Length | 3 mm | - | - |
Product | Enhancement Mode MOSFET | - | - |
Series | DMN3016 | - | - |
Transistor Type | 2 N-Channel | - | - |
Type | Enhancement Mode MOSFET | - | - |
Width | 3 mm | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Forward Transconductance Min | - | - | - |
Fall Time | 5.6 ns, 5.6 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 16.5 ns, 16.5 ns | - | - |
Factory Pack Quantity | 3000 | 10000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 26.1 ns, 26.1 ns | - | - |
Typical Turn On Delay Time | 4.8 ns, 4.8 ns | - | - |