DMN10H099S

DMN10H099SK3-13 vs DMN10H099SFG-7 vs DMN10H099SFG-13

 
PartNumberDMN10H099SK3-13DMN10H099SFG-7DMN10H099SFG-13
DescriptionMOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nCMOSFET 100V N-Ch Enh Mode 1127pF 25.2nCMOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V100 V
Id Continuous Drain Current17 A4.2 A4.2 A
Rds On Drain Source Resistance69 mOhms54 mOhms99 mOhms
Vgs th Gate Source Threshold Voltage2 V1.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge25.2 nC25.2 nC25.2 nC
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation34 W980 mW-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMN10DMN10DMN10
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time7.3 ns7.3 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time5.9 ns5.9 ns-
Factory Pack Quantity250020003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time5.4 ns5.4 ns-
Tradename-PowerDIPowerDI
Unit Weight-0.002540 oz0.002540 oz
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMN10H099SK3-13 MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC
DMN10H099SFG-7 MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
DMN10H099SFG-13 MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
DMN10H099SK3-13 Darlington Transistors MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC
DMN10H099SFG-13 MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
DMN10H099SFG-7 MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
DMN10H099SFG Nuevo y original
DMN10H099SK3 Nuevo y original
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