| PartNumber | DMG1023UV-7 | DMG1023UVQ-7 | DMG1023UVQ-13 |
| Description | MOSFET MOSFET P-CHANNEL | MOSFET MOSFET BVDSS: 8V-24V | MOSFET MOSFET BVDSS: 8V-24V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-563-6 | SOT-563-6 | SOT-563-6 |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 1.03 A | 1.03 A | 1.03 A |
| Rds On Drain Source Resistance | 500 mOhms | 25 Ohms | 25 Ohms |
| Vgs Gate Source Voltage | 6 V | 6 V | 6 V |
| Qg Gate Charge | 622.4 pC | 622 pC | 622 pC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 530 mW | 530 mW | 530 mW |
| Configuration | Dual | Dual | Dual |
| Packaging | Reel | Reel | Reel |
| Product | MOSFET Small Signal | - | - |
| Series | DMG1023 | - | - |
| Transistor Type | 2 P-Channel | 1 P-Channel | 1 P-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 0.9 S | - | - |
| Fall Time | 20.7 ns | 8.1 ns | 8.1 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8.1 ns | 8.1 ns | 8.1 ns |
| Factory Pack Quantity | 3000 | 3000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28.4 ns | 28.4 ns | 28.4 ns |
| Typical Turn On Delay Time | 5.1 ns | 5.1 ns | 5.1 ns |
| Unit Weight | 0.000106 oz | - | - |
| Vgs th Gate Source Threshold Voltage | - | 500 mV | 500 mV |
| Channel Mode | - | Enhancement | Enhancement |
| Qualification | - | AEC-Q101 | AEC-Q101 |