PartNumber | CSD18511KTTT | CSD18511KTT | CSD18511KCS |
Description | MOSFET 40V, N ch NexFET MOSFETG , single D2PAK, 2.6mOhm 3-DDPAK/TO-263 -55 to 175 | MOSFET 40V, N ch NexFET MOSFETG , single D2PAK, 2.6mOhm 3-DDPAK/TO-263 -55 to 175 | MOSFET 40V, N ch NexFET MOSFETG , single TO-220, 2.6mOhm 3-TO-220 -55 to 175 |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
Package / Case | TO-263-3 | TO-263-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Id Continuous Drain Current | 194 A | 194 A | 194 A |
Rds On Drain Source Resistance | 3.2 mOhms | 3.2 mOhms | 3.2 mOhms |
Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | 1.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 64 nC | 64 nC | 64 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 188 W | 188 W | 188 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Tube |
Series | CSD18511KTT | CSD18511KTT | CSD18511KCS |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Texas Instruments | Texas Instruments | Texas Instruments |
Forward Transconductance Min | 249 S | 249 S | 249 S |
Fall Time | 3 ns | 3 ns | 3 ns |
Moisture Sensitive | Yes | Yes | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 6 ns | 6 ns | 6 ns |
Factory Pack Quantity | 50 | 500 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 17 ns | 17 ns | 17 ns |
Typical Turn On Delay Time | 8 ns | 8 ns | 8 ns |