BUK9615

BUK9615-100A,118 vs BUK9615-100E,118

 
PartNumberBUK9615-100A,118BUK9615-100E,118
DescriptionMOSFET TAPE13 PWR-MOSMOSFET BUK9615-100E/D2PAK/REEL 13" Q1
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage100 V-
Id Continuous Drain Current75 A-
Rds On Drain Source Resistance14.4 mOhms-
Vgs Gate Source Voltage10 V-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 175 C-
Pd Power Dissipation230 W-
ConfigurationSingle-
Channel ModeEnhancement-
QualificationAEC-Q101AEC-Q101
PackagingReelReel
Height4.5 mm-
Length10.3 mm-
Transistor Type1 N-Channel-
Width9.4 mm-
BrandNexperiaNexperia
Fall Time130 ns-
Product TypeMOSFETMOSFET
Rise Time130 ns-
Factory Pack Quantity800800
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time400 ns-
Typical Turn On Delay Time45 ns-
Part # Aliases/T3 BUK9615-100A-
Unit Weight0.051211 oz0.077603 oz
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
BUK9615-100A,118 MOSFET TAPE13 PWR-MOS
BUK9615-100E,118 MOSFET BUK9615-100E/D2PAK/REEL 13" Q1
BUK9615-100A,118 MOSFET N-CH 100V 75A D2PAK
BUK9615-100E,118 MOSFET N-CH 100V 66A D2PAK
NXP Semiconductors
NXP Semiconductors
BUK96150-55A,118 MOSFET N-CH 55V 13A D2PAK
BUK9615-100A Nuevo y original
BUK9615-100A118 Now Nexperia BUK9615-100A - Power Field-Effect Transistor, 75A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK9615-100E118 Now Nexperia BUK9615-100E - Power Field-Effect Transistor, 66A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK96150-55A Nuevo y original
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