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| PartNumber | BUK9612-55B,118 | BUK9611-80E,118 | BUK9610-100B,118 |
| Description | MOSFET HIGH PERF TRENCHMOS | MOSFET TrenchMOS N-Channel | MOSFET HIGH PERF TRENCHMOS |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 80 V | 100 V |
| Id Continuous Drain Current | 79 A | 75 A | 110 A |
| Rds On Drain Source Resistance | 10 mOhms | 11 mOhms | 9.7 mOhms |
| Vgs Gate Source Voltage | 15 V | 10 V | 15 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 157 W | 182 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 4.5 mm | - | 4.5 mm |
| Length | 10.3 mm | - | 10.3 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.4 mm | - | 9.4 mm |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 75 ns | 53.2 ns | 94 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 101 ns | 63.9 ns | 110 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 96 ns | 58.4 ns | 250 ns |
| Typical Turn On Delay Time | 19 ns | 29.6 ns | 60 ns |
| Part # Aliases | /T3 BUK9612-55B | - | /T3 BUK9610-100B |
| Vgs th Gate Source Threshold Voltage | - | 1.7 V | - |
| Qg Gate Charge | - | 48.8 nC | - |
| Unit Weight | - | 0.139332 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
BUK9612-55B,118 | MOSFET HIGH PERF TRENCHMOS | |
| BUK9614-60E,118 | MOSFET N-channel TrenchMOS logic level FET | ||
| BUK9616-75B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK9611-80E,118 | MOSFET TrenchMOS N-Channel | ||
| BUK96180-100A,118 | MOSFET TAPE13 PWR-MOS | ||
| BUK9615-100A,118 | MOSFET TAPE13 PWR-MOS | ||
| BUK9610-100B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK9615-100E,118 | MOSFET BUK9615-100E/D2PAK/REEL 13" Q1 | ||
| BUK961R6-40E,118 | MOSFET N-Chan 40V 120A | ||
| BUK9614-55A,118 | MOSFET TAPE13 PWR-MOS | ||
| BUK9614-60E,118 | MOSFET N-CH 60V 56A D2PAK | ||
| BUK9615-100A,118 | MOSFET N-CH 100V 75A D2PAK | ||
| BUK9615-100E,118 | MOSFET N-CH 100V 66A D2PAK | ||
| BUK9616-75B,118 | Darlington Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK9611-80E,118 | IGBT Transistors MOSFET TrenchMOS N-Channel | ||
| BUK961R6-40E,118 | IGBT Transistors MOSFET N-Chan 40V 120A | ||
| BUK9610-100B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK9612-55B,118 | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK96180-100A,118 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
| BUK9614-55A,118 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
NXP Semiconductors |
BUK9610-55A,118 | MOSFET N-CH 55V 75A D2PAK | |
| BUK9611-55A,118 | MOSFET N-CH 55V 75A D2PAK | ||
| BUK96150-55A,118 | MOSFET N-CH 55V 13A D2PAK | ||
| BUK9616-55A,118 | MOSFET N-CH 55V 66A D2PAK | ||
| BUK9618-55A,118 | MOSFET N-CH 55V 61A D2PAK | ||
| BUK961R4-30E,118 | MOSFET N-CH 30V 120A D2PAK | ||
| BUK961R5-30E,118 | IGBT Transistors MOSFET BUK961R5-30E/D2PAK/REEL13 | ||
| BUK96180-100A118 | Now Nexperia BUK96180-100A - Power Field-Effect Transistor, 11A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK96180-100A.118 | Transistor: N-MOSFET, unipolar, 100V, 7.7A, 54W, D2PAK | ||
| BUK9614-55A118 | Now Nexperia BUK9614-55A Power Field-Effect Transistor, 73A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| BUK9610-100B | Nuevo y original | ||
| BUK9610-100B118 | Now Nexperia BUK9610-100B - Power Field-Effect Transistor, 110A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK9610-55A | Nuevo y original | ||
| BUK9611-80E118 | Now Nexperia BUK9611-80E - Power Field-Effect Transistor, 75A I(D), 80V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK9612-55B | Nuevo y original | ||
| BUK9614-55 | Nuevo y original | ||
| BUK9615-100A | Nuevo y original | ||
| BUK9615-100A118 | Now Nexperia BUK9615-100A - Power Field-Effect Transistor, 75A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK9615-100E118 | Now Nexperia BUK9615-100E - Power Field-Effect Transistor, 66A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK9616-55A | Nuevo y original | ||
| BUK9616-75B | MOSFET, AEC-Q101, N-CH, 75V, TO-263 | ||
| BUK9618 | Nuevo y original | ||
| BUK96180-100A | Nuevo y original | ||
| BUK961R5-30E118 | Now Nexperia BUK961R5-30E - Power Field-Effect Transistor, D2PAK | ||
| BUK961R6-40E | MOSFET, N CHANNEL, 40V, 120A, D2PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.00117ohm, Rds(on) Test Voltage Vgs:10V, | ||
| BUK9611-55A | Nuevo y original | ||
| BUK96150-55A | Nuevo y original | ||
| BUK9618-55A | Nuevo y original | ||
| BUK961R4-30E | Nuevo y original | ||
| BUK961R5-30E | Nuevo y original |