PartNumber | BUK9610-100B,118 | BUK9610-100B | BUK9610-100B118 |
Description | MOSFET HIGH PERF TRENCHMOS | Now Nexperia BUK9610-100B - Power Field-Effect Transistor, 110A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
Manufacturer | Nexperia | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 110 A | - | - |
Rds On Drain Source Resistance | 9.7 mOhms | - | - |
Vgs Gate Source Voltage | 15 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 300 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | - | - |
Height | 4.5 mm | - | - |
Length | 10.3 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 9.4 mm | - | - |
Brand | Nexperia | - | - |
Fall Time | 94 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 110 ns | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 250 ns | - | - |
Typical Turn On Delay Time | 60 ns | - | - |
Part # Aliases | /T3 BUK9610-100B | - | - |