 | |  | |
| PartNumber | BSZ22DN20NS3 G | BSZ22DN20NS3GATMA1 | BSZ22DN20NS3G |
| Description | MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 | Power Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSDSON-8 | TSDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 7 A | 7 A | - |
| Rds On Drain Source Resistance | 194 mOhms | 194 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 5.6 nC | 5.6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 34 W | 34 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 3.5 S | 3.5 S | - |
| Fall Time | 3 ns | 3 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 4 ns | 4 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 6 ns | 6 ns | - |
| Typical Turn On Delay Time | 4 ns | 4 ns | - |
| Part # Aliases | BSZ22DN20NS3GATMA1 BSZ22DN2NS3GXT SP000781794 | BSZ22DN20NS3 BSZ22DN2NS3GXT G SP000781794 | - |
| Tradename | - | OptiMOS | OptiMOS |
| Series | - | OptiMOS 3 | BSZ22DN20 |
| Unit Weight | - | 0.001277 oz | - |
| Part Aliases | - | - | BSZ22DN20NS3 BSZ22DN20NS3GXT G SP000781794 |
| Package Case | - | - | TSDSON-8 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ22DN20NS3 G | MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 | |
| BSZ22DN20NS3GATMA1 | MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 | ||
| BSZ22DN20NS3GATMA1 | MOSFET N-CH 200V 7A 8TSDSON | ||
| BSZ22DN20NS3 G | Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP | ||
| BSZ22DN20NS3G | Power Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |