BSZ22DN20NS3GATMA1

Mfr. #:: BSZ22DN20NS3GATMA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-CH 200V 7A 8TSDSON
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: BSZ22DN20NS3GATMA1 Ficha de datos
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Más información:: BSZ22DN20NS3GATMA1 más información

Atributo del producto
Valor de atributo

Tags: BSZ22, BSZ2, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ22DN20NS3GATMA1 Descripción

***Components: In a Pack of 20, N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON Infineon BSZ22DN20NS3GATMA1

***p One Stop Global: Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP

***ical: Trans MOSFET N-CH 200V 7A 8-Pin TSDSON

***ark: MOSFET, N CH, 200V, 7A, TSDSON-8

***i-Key: MOSFET N-CH 200V 7A 8TDSON

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 200V, 7A, TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.194ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:34W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 200V, 7A, TSDSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:7A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.194ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:34W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply

BSZ22DN20NS3GATMA1 Más información

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Resonant Wireless Charging - Consumer Applications: Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
BSZ22DN20NS3GATMA1 DISTI # V36:1790_06384496	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R RoHS: Compliant	20000	5000:$0.3973
BSZ22DN20NS3GATMA1 DISTI # V72:2272_06384496	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R RoHS: Compliant	664	500:$0.5384 250:$0.5510 100:$0.6122 25:$0.7147 10:$0.8735 1:$1.0134
BSZ22DN20NS3GATMA1 DISTI # BSZ22DN20NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9613In Stock	1000:$0.4633 500:$0.5869 100:$0.7104 10:$0.9110 1:$1.0200
BSZ22DN20NS3GATMA1 DISTI # BSZ22DN20NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9613In Stock	1000:$0.4633 500:$0.5869 100:$0.7104 10:$0.9110 1:$1.0200
BSZ22DN20NS3GATMA1 DISTI # BSZ22DN20NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A 8TSDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.3799 10000:$0.3839 5000:$0.3988
BSZ22DN20NS3GATMA1 DISTI # 33128679	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R RoHS: Compliant	20000	5000:$0.3973
BSZ22DN20NS3GATMA1 DISTI # 32736050	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.3501
BSZ22DN20NS3GATMA1 DISTI # 31984785	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R RoHS: Compliant	664	16:$1.0134
BSZ22DN20NS3GATMA1 DISTI # BSZ22DN20NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Bulk (Alt: BSZ22DN20NS3GATMA1) Min Qty: 962 Container: Bulk	Americas - 0	9620:$0.3299 4810:$0.3359 2886:$0.3479 1924:$0.3609 962:$0.3739
BSZ22DN20NS3GATMA1 DISTI # BSZ22DN20NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ22DN20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.3619 30000:$0.3689 20000:$0.3819 10000:$0.3959 5000:$0.4109
BSZ22DN20NS3GATMA1 DISTI # SP000781794	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP (Alt: SP000781794) RoHS: Compliant Min Qty: 5000	Europe - 0	50000:€0.3329 30000:€0.3579 20000:€0.3879 10000:€0.4229 5000:€0.5179
BSZ22DN20NS3GATMA1 DISTI # 85X4160	Infineon Technologies AG	MOSFET Transistor, N Channel, 7 A, 200 V, 0.194 ohm, 10 V, 3 V RoHS Compliant: Yes	0
BSZ22DN20NS3 G DISTI # 726-BSZ22DN20NS3G	Infineon Technologies AG	MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 RoHS: Compliant	12720	1:$0.9300 10:$0.8000 100:$0.6150 500:$0.5430 1000:$0.4290 5000:$0.3800 10000:$0.3660
BSZ22DN20NS3GATMA1 DISTI # 726-BSZ22DN20NS3GATM	Infineon Technologies AG	MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 RoHS: Compliant	218	1:$0.9300 10:$0.8000 100:$0.6150 500:$0.5430 1000:$0.4290 5000:$0.3800 10000:$0.3660
BSZ22DN20NS3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	122641	1000:$0.3400 500:$0.3600 100:$0.3800 25:$0.3900 1:$0.4200
BSZ22DN20NS3GATMA1 DISTI # 2443374	Infineon Technologies AG	MOSFET, N CH, 200V, 7A, TSDSON-8 RoHS: Compliant	0	5000:$0.5850 1000:$0.6600 500:$0.8350 100:$0.9460 10:$1.2400 1:$1.4300
BSZ22DN20NS3GATMA1 DISTI # 2443374RL	Infineon Technologies AG	MOSFET, N CH, 200V, 7A, TSDSON-8 RoHS: Compliant	0	5000:$0.5850 1000:$0.6600 500:$0.8350 100:$0.9460 10:$1.2400 1:$1.4300

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: BSZ22DN20NS3 G OMO.#: OMO-BSZ22DN20NS3-G	MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
	Mfr.#: BSZ22DN20NS3GATMA1 OMO.#: OMO-BSZ22DN20NS3GATMA1	MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
	Mfr.#: BSZ22DN20NS3 G OMO.#: OMO-BSZ22DN20NS3-G-1190	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP
	Mfr.#: BSZ22DN20NS3G OMO.#: OMO-BSZ22DN20NS3G-1190	Power Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSZ22DN20NS3GATMA1 OMO.#: OMO-BSZ22DN20NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 200V 7A 8TSDSON

Disponibilidad

Valores:: Available
En orden:: 2000
Ingrese la cantidad:

El precio actual de BSZ22DN20NS3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,54 US$~~; ~~0,54 US$~~

10: ~~0,52 US$~~; ~~5,16 US$~~

100: ~~0,49 US$~~; ~~48,86 US$~~

500: ~~0,46 US$~~; ~~230,70 US$~~

1000: ~~0,43 US$~~; ~~434,30 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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BSZ22DN20NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes