 |  |  | |
| PartNumber | BSZ0901NSI | BSZ0901NSI FDMC7660S | BSZ0901NSIATMA1 |
| Description | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | MOSFET N-CH 30V 40A TSDSON | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 2.1 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 41 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 3.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 50 S | - | - |
| Fall Time | 4.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.2 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27 nS | - | - |
| Typical Turn On Delay Time | 5 nS | - | - |
| Part # Aliases | BSZ0901NSIATMA1 BSZ91NSIXT SP000853566 | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ0901NSI | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | |
| BSZ0901NSIATMA1 | MOSFET N-CH 30V 40A TSDSON | ||
| BSZ0901NSI FDMC7660S | Nuevo y original | ||
| BSZ0901NSI | Darlington Transistors MOSFET N-Ch 30V 40A TDSON-8 OptiMOS |