BSZ0901NSIATMA1

BSZ0901NSIATMA1
Mfr. #:
BSZ0901NSIATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 30V 40A TSDSON
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSZ0901NSIATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
BSZ0901NSI, BSZ0901, BSZ090, BSZ09, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 25A Automotive 8-Pin TSDSON EP T/R
***ponent Sense
MOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
***p One Stop Japan
Trans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R
***an P&S
30V,2.1mΩ,40A,N-Channel Power MOSFET
***ark
MOSFET, N-CH, 30V, 40A, TSDSON-8
*** Source Electronics
n-Channel Power MOSFET
***i-Key
MOSFET N-CH 30V 40A TSDSON
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 40A, TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:69W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CANALE N 30V 40A TSDSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:40A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0018ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:69W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Parte # Mfg. Descripción Valores Precio
BSZ0901NSIATMA1
DISTI # V72:2272_06383704
Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R
RoHS: Compliant
1547
  • 1000:$0.5349
  • 500:$0.6804
  • 250:$0.7897
  • 100:$0.8388
  • 25:$1.0397
  • 10:$1.0971
  • 1:$1.3963
BSZ0901NSIATMA1
DISTI # V36:1790_06383704
Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R
RoHS: Compliant
0
  • 5000000:$0.4223
  • 2500000:$0.4226
  • 500000:$0.4496
  • 50000:$0.4981
  • 5000:$0.5062
BSZ0901NSIATMA1
DISTI # BSZ0901NSIATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5004In Stock
  • 1000:$0.5881
  • 500:$0.7449
  • 100:$0.9017
  • 10:$1.1570
  • 1:$1.2900
BSZ0901NSIATMA1
DISTI # BSZ0901NSIATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5004In Stock
  • 1000:$0.5881
  • 500:$0.7449
  • 100:$0.9017
  • 10:$1.1570
  • 1:$1.2900
BSZ0901NSIATMA1
DISTI # BSZ0901NSIATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 10000:$0.4872
  • 5000:$0.5062
BSZ0901NSIATMA1
DISTI # 33614477
Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.5024
BSZ0901NSIATMA1
DISTI # 31958100
Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R
RoHS: Compliant
1547
  • 1000:$0.5349
  • 500:$0.6804
  • 250:$0.7897
  • 100:$0.8388
  • 25:$1.0397
  • 18:$1.0971
BSZ0901NSIATMA1
DISTI # BSZ0901NSIATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ0901NSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.3679
  • 30000:$0.3749
  • 20000:$0.3879
  • 10000:$0.4019
  • 5000:$0.4169
BSZ0901NSIATMA1
DISTI # SP000853566
Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R (Alt: SP000853566)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 50000:€0.3489
  • 30000:€0.3759
  • 20000:€0.4079
  • 10000:€0.4449
  • 5000:€0.5439
BSZ0901NSIATMA1
DISTI # 50Y1833
Infineon Technologies AGMOSFET Transistor, N Channel, 40 A, 30 V, 0.0018 ohm, 10 V, 2 V RoHS Compliant: Yes0
  • 1000:$0.5490
  • 500:$0.6960
  • 250:$0.7420
  • 100:$0.7880
  • 50:$0.8650
  • 25:$0.9430
  • 10:$1.0200
  • 1:$1.2000
BSZ0901NSI
DISTI # 726-BSZ0901NSI
Infineon Technologies AGMOSFET N-Ch 30V 40A TDSON-8 OptiMOS
RoHS: Compliant
0
  • 1:$1.1900
  • 10:$1.0100
  • 100:$0.7800
  • 500:$0.6890
  • 1000:$0.5440
  • 5000:$0.4830
  • 10000:$0.4650
BSZ0901NSIATMA1
DISTI # 2480785RL
Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TSDSON-8
RoHS: Compliant
0
  • 100:$1.2100
  • 10:$1.5600
  • 1:$1.8300
BSZ0901NSIATMA1
DISTI # 2480785
Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TSDSON-8
RoHS: Compliant
1151
  • 100:$1.2100
  • 10:$1.5600
  • 1:$1.8300
BSZ0901NSIATMA1
DISTI # 2480785
Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TSDSON-84870
  • 100:£0.7440
  • 25:£0.9640
  • 5:£1.0700
Imagen Parte # Descripción
BSZ0901NS

Mfr.#: BSZ0901NS

OMO.#: OMO-BSZ0901NS

MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSZ0901NSI

Mfr.#: BSZ0901NSI

OMO.#: OMO-BSZ0901NSI

MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSZ0901NSATMA1

Mfr.#: BSZ0901NSATMA1

OMO.#: OMO-BSZ0901NSATMA1

MOSFET LV POWER MOS
BSZ0901NSXT

Mfr.#: BSZ0901NSXT

OMO.#: OMO-BSZ0901NSXT-1190

Trans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ0901NSATMA1)
BSZ0901NSI   FDMC7660S

Mfr.#: BSZ0901NSI FDMC7660S

OMO.#: OMO-BSZ0901NSI-FDMC7660S-1190

Nuevo y original
BSZ0901NSIATMA1

Mfr.#: BSZ0901NSIATMA1

OMO.#: OMO-BSZ0901NSIATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 40A TSDSON
BSZ0901NSATMA1

Mfr.#: BSZ0901NSATMA1

OMO.#: OMO-BSZ0901NSATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V S308
BSZ0901NSI

Mfr.#: BSZ0901NSI

OMO.#: OMO-BSZ0901NSI-124

Darlington Transistors MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSZ0901NS

Mfr.#: BSZ0901NS

OMO.#: OMO-BSZ0901NS-124

Darlington Transistors MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de BSZ0901NSIATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,55 US$
0,55 US$
10
0,52 US$
5,24 US$
100
0,50 US$
49,67 US$
500
0,47 US$
234,55 US$
1000
0,44 US$
441,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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