 | | | |
| PartNumber | BSS806NEH6327XTSA1 | BSS806NE H6327 | BSS806N H6327 |
| Description | MOSFET N-Ch 20V 2.3A SOT-23-3 | MOSFET N-Ch 20V 2.3A SOT-23-3 | MOSFET N-Ch 20V 2.3A SOT-23-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 2.3 A | 2.3 A | 2.3 A |
| Rds On Drain Source Resistance | 41 mOhms | 41 mOhms | 41 mOhms |
| Vgs th Gate Source Threshold Voltage | 300 mV | 300 mV | 550 mV |
| Vgs Gate Source Voltage | 8 V | 8 V | 20 V |
| Qg Gate Charge | 1.7 nC | 1.7 nC | 1.7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 2.9 mm | 2.9 mm | 2.9 mm |
| Series | BSS806 | BSS806 | BSS806 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 1.3 mm | 1.3 mm | 1.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 9 S | 9 S | 9 S |
| Fall Time | 3.7 ns | 3.7 ns | 3.7 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9.9 ns | 9.9 ns | 9.9 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12 ns | 12 ns | 12 ns |
| Typical Turn On Delay Time | 7.5 ns | 7.5 ns | 7.5 ns |
| Part # Aliases | BSS806NE H6327 SP000999336 | BSS806NEH6327XTSA1 SP000999336 | BSS806NH6327XTSA1 BSS86NH6327XT SP000928952 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Qualification | - | - | AEC-Q101 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS806NEH6327XTSA1 | MOSFET N-Ch 20V 2.3A SOT-23-3 | |
| BSS806NH6327XTSA1 | MOSFET N-Ch 20V 2.3A SOT-23-3 | ||
| BSS806NE H6327 | MOSFET N-Ch 20V 2.3A SOT-23-3 | ||
| BSS806N H6327 | MOSFET N-Ch 20V 2.3A SOT-23-3 | ||
| BSS806NEH6327XTSA1 | MOSFET N-CH 20V 2.3A SOT23 | ||
| BSS806NH6327XTSA1 | MOSFET N-CH 20V 2.3A SOT23 | ||
| BSS806NL6327HTSA1 | MOSFET N-CH 20V 2.3A SOT23 | ||
| BSS802 | Nuevo y original | ||
| BSS802N | Nuevo y original | ||
| BSS804DW-7-F | Nuevo y original | ||
| BSS806N | Nuevo y original | ||
| BSS806N H6327 | Trans MOSFET N-CH 20V 2.3A 3-Pin SOT-23 (Alt: BSS806N H6327) | ||
| BSS806N L6327 | Trans MOSFET N-Ch 20V (Alt: SP000464848) | ||
| BSS806NE | Nuevo y original | ||
| BSS806NE H6327 | MOSFET N-Ch 20V 2.3A SOT-23-3 | ||
| BSS806NEH6327 | Nuevo y original | ||
| BSS806NH6327 | 20V,57m��,2.3A,N-Ch Small-Signal MOSFET | ||
| BSS806NL6327 | Nuevo y original | ||
| BSS806NL6327S | Nuevo y original | ||
| BSS80B | Nuevo y original | ||
| BSS80B-E6300 | Nuevo y original | ||
| BSS80BTA | Nuevo y original | ||
| BSS80C | - Bulk (Alt: BSS80C) | ||
| BSS80C E-6327 | Nuevo y original | ||
| BSS80C E6327 | Nuevo y original | ||
| BSS80CE-6327 | 800 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR | ||
| BSS80CE6327 | Nuevo y original | ||
| BSS80CTA | Bipolar Transistors - BJT | ||
| BSS80CTC | Nuevo y original |