 |  |  | |
| PartNumber | BSS225H6327FTSA1 | BSS225H6327 | BSS225H6327XTSA1 |
| Description | MOSFET N-Ch 600V 90mA SOT-89-3 | Trans MOSFET N-CH 600V 0.09A 3-Pin SOT-89 T/R (Alt: BSS225 H6327) | IGBT Transistors MOSFET SMALL SIGNAL+P-CH |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-89-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 90 mA | - | - |
| Rds On Drain Source Resistance | 28 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 5.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Reel |
| Height | 1.5 mm | - | - |
| Length | 4.5 mm | - | - |
| Series | BSS225 | - | - |
| Transistor Type | 1 N-Channel | - | 1 P-Channel |
| Width | 2.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 50 mS | - | - |
| Fall Time | 41 ns | - | 41 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 38 ns | - | 38 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 62 ns | - | 62 ns |
| Typical Turn On Delay Time | 14 ns | - | 14 ns |
| Part # Aliases | BSS225 H6327 SP001047644 | - | - |
| Unit Weight | 0.004603 oz | - | 0.004603 oz |
| Part Aliases | - | - | BSS225 H6327 SP001195032 |
| Package Case | - | - | SOT-89-4 |
| Pd Power Dissipation | - | - | 1 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 90 mA |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.3 V |
| Rds On Drain Source Resistance | - | - | 45 Ohms |
| Qg Gate Charge | - | - | 3.9 nC |
| Forward Transconductance Min | - | - | 50 mS |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS225H6327FTSA1 | MOSFET N-Ch 600V 90mA SOT-89-3 | |
| BSS225H6327FTSA1 | MOSFET N-CH 600V 0.09A SOT-89 | ||
| BSS225H6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
| BSS225H6327 | Trans MOSFET N-CH 600V 0.09A 3-Pin SOT-89 T/R (Alt: BSS225 H6327) |