BSS225H6327XTSA1

BSS225H6327XTSA1
Mfr. #:
BSS225H6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET SMALL SIGNAL+P-CH
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSS225H6327XTSA1 Ficha de datos
Entrega:
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HTML Datasheet:
BSS225H6327XTSA1 DatasheetBSS225H6327XTSA1 Datasheet (P4-P6)BSS225H6327XTSA1 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
BSS225 H6327 SP001195032
Unidad de peso
0.004603 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOT-89-4
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 P-Channel
Disipación de potencia Pd
1 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
41 ns
Hora de levantarse
38 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
90 mA
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
1.3 V
Resistencia a la fuente de desagüe de Rds
45 Ohms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
62 ns
Tiempo de retardo de encendido típico
14 ns
Qg-Gate-Charge
3.9 nC
Transconductancia directa-Mín.
50 mS
Modo de canal
Mejora
Tags
BSS225H, BSS225, BSS22, BSS2, BSS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
BSS225H6327XTSA1
DISTI # V36:1790_06391969
Infineon Technologies AGTrans MOSFET N-CH 600V 0.09A Automotive 4-Pin(3+Tab) SOT-89 T/R
RoHS: Compliant
0
    BSS225H6327XTSA1
    DISTI # BSS225H6327XTSA1-ND
    Infineon Technologies AGMOSFET N-CH 600V 90MA SOT89
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 1000:$0.1795
    BSS225H6327XTSA1
    DISTI # BSS225H6327XTSA1
    Infineon Technologies AGTrans MOSFET N-CH 600V 0.09A 4-Pin SOT-89 T/R - Tape and Reel (Alt: BSS225H6327XTSA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
      BSS225H6327XTSA1
      DISTI # 726-BSS225H6327XTSA1
      Infineon Technologies AGMOSFET SMALL SIGNAL+N-CH
      RoHS: Compliant
      0
        Imagen Parte # Descripción
        BSS225H6327FTSA1

        Mfr.#: BSS225H6327FTSA1

        OMO.#: OMO-BSS225H6327FTSA1

        MOSFET N-Ch 600V 90mA SOT-89-3
        BSS225H6327

        Mfr.#: BSS225H6327

        OMO.#: OMO-BSS225H6327-1190

        Trans MOSFET N-CH 600V 0.09A 3-Pin SOT-89 T/R (Alt: BSS225 H6327)
        BSS225H6327FTSA1

        Mfr.#: BSS225H6327FTSA1

        OMO.#: OMO-BSS225H6327FTSA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 600V 0.09A SOT-89
        BSS225H6327XTSA1

        Mfr.#: BSS225H6327XTSA1

        OMO.#: OMO-BSS225H6327XTSA1-INFINEON-TECHNOLOGIES

        IGBT Transistors MOSFET SMALL SIGNAL+P-CH
        Disponibilidad
        Valores:
        Available
        En orden:
        5000
        Ingrese la cantidad:
        El precio actual de BSS225H6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,27 US$
        0,27 US$
        10
        0,26 US$
        2,56 US$
        100
        0,24 US$
        24,24 US$
        500
        0,23 US$
        114,45 US$
        1000
        0,22 US$
        215,40 US$
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