 |  | |
| PartNumber | BSP89H6327XTSA1 | BSP89H6327 |
| Description | MOSFET SIPMOS Sm-Signal 240V 6Ohm 350mA | 240V,0.35A,6Ohm,N-CH POWER MOSFET |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-223-4 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 240 V | - |
| Id Continuous Drain Current | 350 mA | - |
| Rds On Drain Source Resistance | 4.2 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 6.4 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 1.8 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 1.6 mm | - |
| Length | 6.5 mm | - |
| Series | BSP89 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 3.5 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 180 mS | - |
| Fall Time | 18.4 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 3.5 ns | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 15.9 ns | - |
| Typical Turn On Delay Time | 4 ns | - |
| Part # Aliases | BSP89 H6327 SP001058794 | - |
| Unit Weight | 0.003951 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP89H6327XTSA1 | MOSFET SIPMOS Sm-Signal 240V 6Ohm 350mA | |
| BSP89H6327XTSA1 | MOSFET N-CH 4SOT223 | ||
| BSP89H6327 | 240V,0.35A,6Ohm,N-CH POWER MOSFET |