PartNumber | BSP89,115 | BSP89 H6327 | BSP89 E6327 |
Description | MOSFET N-CH DMOS 240V 375MA | MOSFET SIPMOS Sm-Signal 240V 6Ohm 350mA | MOSFET N-CH 240V 350MA SOT-223 |
Manufacturer | Nexperia | Infineon | Infineon |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-223-3 | SOT-223-4 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 240 V | 240 V | - |
Id Continuous Drain Current | 375 mA | 350 mA | - |
Rds On Drain Source Resistance | 2.8 Ohms | 4.2 Ohms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1.5 W | 1.8 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 1.7 mm | 1.6 mm | - |
Length | 6.7 mm | 6.5 mm | - |
Product | MOSFET Small Signal | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.7 mm | 3.5 mm | - |
Brand | Nexperia | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | BSP89 T/R | BSP89H6327XTSA1 SP001058794 | - |
Unit Weight | 0.008818 oz | 0.003951 oz | - |
Vgs th Gate Source Threshold Voltage | - | 800 mV | - |
Qg Gate Charge | - | 6.4 nC | - |
Series | - | BSP89 | - |
Forward Transconductance Min | - | 180 mS | - |
Fall Time | - | 18.4 ns | - |
Rise Time | - | 3.5 ns | - |
Typical Turn Off Delay Time | - | 15.9 ns | - |
Typical Turn On Delay Time | - | 4 ns | - |