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| PartNumber | BSP88H6327 | BSP88H6327XTSA1 |
| Description | IGBT Transistors MOSFET N-Ch 240V 350mA SOT-223-3 | |
| Manufacturer | - | Infineon Technologies |
| Product Category | - | Transistors - FETs, MOSFETs - Single |
| Series | - | BSP88 |
| Packaging | - | Reel |
| Part Aliases | - | BSP88 H6327 SP001058790 |
| Unit Weight | - | 0.008826 oz |
| Mounting Style | - | SMD/SMT |
| Package Case | - | SOT-223-4 |
| Technology | - | Si |
| Number of Channels | - | 1 Channel |
| Transistor Type | - | 1 N-Channel |
| Pd Power Dissipation | - | 1.8 W |
| Maximum Operating Temperature | - | + 150 C |
| Minimum Operating Temperature | - | - 55 C |
| Fall Time | - | 18.9 ns |
| Rise Time | - | 3.5 ns |
| Vgs Gate Source Voltage | - | 20 V |
| Id Continuous Drain Current | - | 350 mA |
| Vds Drain Source Breakdown Voltage | - | 240 V |
| Vgs th Gate Source Threshold Voltage | - | 1.4 V |
| Rds On Drain Source Resistance | - | 6 Ohms |
| Transistor Polarity | - | N-Channel |
| Typical Turn Off Delay Time | - | 17.9 ns |
| Typical Turn On Delay Time | - | 3.6 ns |
| Qg Gate Charge | - | 4.5 nC |
| Forward Transconductance Min | - | 0.19 S |
| Channel Mode | - | Enhancement |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| BSP88H6327 | Nuevo y original | ||
Infineon Technologies |
BSP88H6327XTSA1 | IGBT Transistors MOSFET N-Ch 240V 350mA SOT-223-3 |