 |  | | |
| PartNumber | BSP88 H6327 | BSP88E6327 | BSP88H6327XTSA1 |
| Description | MOSFET N-Ch 240V 350mA SOT-223-3 | MOSFET N-CH 240V 350MA SOT223 | IGBT Transistors MOSFET N-Ch 240V 350mA SOT-223-3 |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 240 V | - | - |
| Id Continuous Drain Current | 350 mA | - | - |
| Rds On Drain Source Resistance | 4 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 6.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Reel |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP88 | - | BSP88 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 190 mS | - | - |
| Fall Time | 18.9 ns | - | 18.9 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 3.5 ns | - | 3.5 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 17.9 ns | - | 17.9 ns |
| Typical Turn On Delay Time | 3.6 ns | - | 3.6 ns |
| Part # Aliases | BSP88H6327XTSA1 SP001058790 | - | - |
| Unit Weight | 0.003951 oz | - | 0.008826 oz |
| Part Aliases | - | - | BSP88 H6327 SP001058790 |
| Package Case | - | - | SOT-223-4 |
| Pd Power Dissipation | - | - | 1.8 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 350 mA |
| Vds Drain Source Breakdown Voltage | - | - | 240 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.4 V |
| Rds On Drain Source Resistance | - | - | 6 Ohms |
| Qg Gate Charge | - | - | 4.5 nC |
| Forward Transconductance Min | - | - | 0.19 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP88 H6327 | MOSFET N-Ch 240V 350mA SOT-223-3 | |
| BSP88E6327 | MOSFET N-CH 240V 350MA SOT223 | ||
| BSP88L6327HTSA1 | MOSFET N-CH 240V 350MA SOT223 | ||
| BSP88H6327XTSA1 | IGBT Transistors MOSFET N-Ch 240V 350mA SOT-223-3 | ||
| BSP88 | Nuevo y original | ||
| BSP88 H6327 | MOSFET N-Ch 240V 350mA SOT-223-3 | ||
| BSP88 L6327 | Trans MOSFET N-CH 240V 0.35A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP88L6327) | ||
| BSP88H6327 | Nuevo y original | ||
| BSP88L6327 | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |