BSP716NH

BSP716NH6327XTSA1 vs BSP716NH6327

 
PartNumberBSP716NH6327XTSA1BSP716NH6327
DescriptionMOSFET SMALL SIGNAL+N-CH75V,180m��,2.3A,N-Ch Small-Signal MOSFET
ManufacturerInfineonInfineon Technologies
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single
RoHSY-
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-223-4-
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelP-Channel
Vds Drain Source Breakdown Voltage75 V-
Id Continuous Drain Current2.3 A-
Rds On Drain Source Resistance160 mOhms-
Vgs th Gate Source Threshold Voltage800 mV-
Vgs Gate Source Voltage10 V-
Qg Gate Charge8.7 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation1.8 W-
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height1.6 mm-
Length6.5 mm-
Transistor Type1 P-Channel1 P-Channel
Width3.5 mm-
BrandInfineon Technologies-
Forward Transconductance Min5.71 S-
Fall Time16.7 ns16.7 ns
Product TypeMOSFET-
Rise Time5.5 ns5.5 ns
Factory Pack Quantity1000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time50.1 ns50.1 ns
Typical Turn On Delay Time4.6 ns4.6 ns
Part # AliasesBSP716N H6327 SP001087514-
Unit Weight0.003951 oz-
Part Aliases-BSP716N H6327 SP001087514
Package Case-SOT-223-4
Pd Power Dissipation-1.8 W
Vgs Gate Source Voltage-20 V
Id Continuous Drain Current-2.3 A
Vds Drain Source Breakdown Voltage-75 V
Vgs th Gate Source Threshold Voltage-800 mV
Rds On Drain Source Resistance-160 mOhms
Qg Gate Charge-8.7 nC
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSP716NH6327XTSA1 MOSFET SMALL SIGNAL+N-CH
BSP716NH6327XTSA1 MOSFET N-CH 75V 2.3A SOT223
BSP716NH6327 75V,180m��,2.3A,N-Ch Small-Signal MOSFET
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