PartNumber | BSP716N | BSP716N H6327 | BSP716NH6327 |
Description | 75V,180m��,2.3A,N-Ch Small-Signal MOSFET | ||
Manufacturer | Infineon Technologies | - | Infineon Technologies |
Product Category | Transistors - FETs, MOSFETs - Single | - | Transistors - FETs, MOSFETs - Single |
Packaging | Reel | - | Reel |
Part Aliases | BSP716N H6327 SP001087514 | - | BSP716N H6327 SP001087514 |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package Case | SOT-223-4 | - | SOT-223-4 |
Technology | Si | - | Si |
Number of Channels | 1 Channel | - | 1 Channel |
Configuration | Single | - | Single |
Transistor Type | 1 P-Channel | - | 1 P-Channel |
Pd Power Dissipation | 1.8 W | - | 1.8 W |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Fall Time | 16.7 ns | - | 16.7 ns |
Rise Time | 5.5 ns | - | 5.5 ns |
Vgs Gate Source Voltage | 20 V | - | 20 V |
Id Continuous Drain Current | 2.3 A | - | 2.3 A |
Vds Drain Source Breakdown Voltage | 75 V | - | 75 V |
Vgs th Gate Source Threshold Voltage | 800 mV | - | 800 mV |
Rds On Drain Source Resistance | 160 mOhms | - | 160 mOhms |
Transistor Polarity | P-Channel | - | P-Channel |
Typical Turn Off Delay Time | 50.1 ns | - | 50.1 ns |
Typical Turn On Delay Time | 4.6 ns | - | 4.6 ns |
Qg Gate Charge | 8.7 nC | - | 8.7 nC |
Channel Mode | Enhancement | - | Enhancement |