 |  |  | |
| PartNumber | BSP61,115 | BSP612PH6327XTSA1 | BSP613P |
| Description | Darlington Transistors TRANS DARLINGTON TAPE-7 | MOSFET | MOSFET P-CH 60V 2.9A SOT-223 |
| Manufacturer | Nexperia | Infineon | - |
| Product Category | Darlington Transistors | MOSFET | - |
| RoHS | Y | Y | - |
| Configuration | Single | - | - |
| Transistor Polarity | PNP | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Pd Power Dissipation | 1.25 W | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-3 | SOT-223-4 | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| DC Current Gain hFE Max | 1000 | - | - |
| Height | 1.7 mm | 1.6 mm | - |
| Length | 6.7 mm | 6.5 mm | - |
| Operating Temperature Range | - 65 C to + 150 C | - | - |
| Width | 3.7 mm | 3.5 mm | - |
| Brand | Nexperia | Infineon Technologies | - |
| Continuous Collector Current | - 1 A | - | - |
| DC Collector/Base Gain hfe Min | 1000 | - | - |
| Product Type | Darlington Transistors | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | MOSFETs | - |
| Part # Aliases | BSP61 T/R | BSP612P H6327 SP001098612 | - |
| Unit Weight | 0.003951 oz | 0.004018 oz | - |
| Technology | - | Si | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
BSP61,115 | Darlington Transistors TRANS DARLINGTON TAPE-7 | |
| BSP61,115 | Darlington Transistors TRANS DARLINGTON TAPE-7 | ||
Infineon Technologies |
BSP613P H6327 | MOSFET P-Ch -60V -2.9A SOT-223-3 | |
| BSP613PH6327XTSA1 | MOSFET P-Ch -60V -2.9A SOT-223-3 | ||
| BSP612PH6327XTSA1 | MOSFET | ||
| BSP612PH6327XTSA1 | SMALL SIGNAL+P-CH | ||
| BSP613P | MOSFET P-CH 60V 2.9A SOT-223 | ||
| BSP613PH6327XTSA1 | MOSFET P-CH 60V 2.9A SOT-223 | ||
| BSP613PL6327HUSA1 | MOSFET P-CH 60V 2.9A SOT-223 | ||
| BSP615S2L | MOSFET N-CH 55V 2.8A SOT-223 | ||
| BSP615S2LHUMA1 | MOSFET SOT223-4 | ||
| BSP61E6327HTSA1 | TRANS PNP DARL 60V 1A SOT-223 | ||
| BSP61H6327XTSA1 | TRANS PNP DARL 60V 1A SOT223 | ||
| BSP61E6327HTSA1132 | - Bulk (Alt: BSP61E6327HTSA1132) | ||
| BSP61 | Nuevo y original | ||
| BSP61 , TESD05CB , 44U | Nuevo y original | ||
| BSP61 E6327 | Nuevo y original | ||
| BSP61 H6327 | Nuevo y original | ||
| BSP61. | Nuevo y original | ||
| BSP61/BSP62/BSP60 | Nuevo y original | ||
| BSP61115 | Now Nexperia BSP61 - Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SC-73 | ||
| BSP612P | Nuevo y original | ||
| BSP612P H6327 | Nuevo y original | ||
| BSP613 | Nuevo y original | ||
| BSP613P E6327 | Nuevo y original | ||
| BSP613P H6327 | MOSFET P-Ch -60V -2.9A SOT-223-3 | ||
| BSP613P H6327XTSA | Nuevo y original | ||
| BSP613P L6327 | MOSFET P-Ch -60V 2.9A SOT-223-3 | ||
| BSP613PH6327 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP613PL6327 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP615N | Nuevo y original | ||
| BSP61E6327 | Trans Darlington PNP 60V 1A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP61E6327) | ||
| BSP61E6327XT | Nuevo y original | ||
| BSP61H6327 | Nuevo y original | ||
| BSP613PE6327 | Nuevo y original |